High-Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities

High-Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities

Ambipolar OFETs with balanced hole and electron field‐effect mobilities both exceeding 1 cm2 V−1 s−1 are achieved based on a single‐solution‐processed conjugated polymer, DPPT‐TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high‐performance OF...

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Veröffentlicht in:Advanced materials (Weinheim) 2012-02, Vol.24 (5), p.647-652
Hauptverfasser: Chen, Zhuoying, Lee, Mi Jung, Shahid Ashraf, Raja, Gu, Yun, Albert-Seifried, Sebastian, Meedom Nielsen, Martin, Schroeder, Bob, Anthopoulos, Thomas D., Heeney, Martin, McCulloch, Iain, Sirringhaus, Henning
Format: Artikel
Sprache:eng
Schlagworte:
ambipolar devices
ambipolar transport
Balancing
Charge injection
Copolymers
Devices
Electron mobility
Electrons
Equipment Design
Field effect transistors
Integrated circuits
Optimization
polymers
Polymers - chemistry
solution processing
Thiophenes - chemistry
Transistors, Electronic
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Zusammenfassung:Ambipolar OFETs with balanced hole and electron field‐effect mobilities both exceeding 1 cm2 V−1 s−1 are achieved based on a single‐solution‐processed conjugated polymer, DPPT‐TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high‐performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201102786