10 GHz AlGaInAs/InP 1.55 μm passively mode-locked laser with low divergence angle and timing jitter
We present a 10 GHz 1.55 μm all-active passively mode-locked laser based on a novel AlGaInAs/InP epitaxial structure with a three-quantum-well active layer and a passive far-field reduction layer. The device generated 1.06 ps pulses with a state-of-the-art timing jitter value of 194 fs (4-80 MHz), a...
Gespeichert in:
Veröffentlicht in: | Optics express 2011-12, Vol.19 (26), p.B75-B80 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | We present a 10 GHz 1.55 μm all-active passively mode-locked laser based on a novel AlGaInAs/InP epitaxial structure with a three-quantum-well active layer and a passive far-field reduction layer. The device generated 1.06 ps pulses with a state-of-the-art timing jitter value of 194 fs (4-80 MHz), and a radio-frequency linewidth of 2 kHz, while demonstrating a low divergence angle (14.7° × 27.3°) with a twofold butt coupling efficiency to a flat cleaved single mode fiber, compared to the conventional five-quantum-well MLLs. |
---|---|
ISSN: | 1094-4087 1094-4087 |
DOI: | 10.1364/OE.19.000B75 |