10 GHz AlGaInAs/InP 1.55 μm passively mode-locked laser with low divergence angle and timing jitter

We present a 10 GHz 1.55 μm all-active passively mode-locked laser based on a novel AlGaInAs/InP epitaxial structure with a three-quantum-well active layer and a passive far-field reduction layer. The device generated 1.06 ps pulses with a state-of-the-art timing jitter value of 194 fs (4-80 MHz), a...

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Veröffentlicht in:Optics express 2011-12, Vol.19 (26), p.B75-B80
Hauptverfasser: Hou, Lianping, Haji, Mohsin, Marsh, John H, Bryce, A Catrina
Format: Artikel
Sprache:eng
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Zusammenfassung:We present a 10 GHz 1.55 μm all-active passively mode-locked laser based on a novel AlGaInAs/InP epitaxial structure with a three-quantum-well active layer and a passive far-field reduction layer. The device generated 1.06 ps pulses with a state-of-the-art timing jitter value of 194 fs (4-80 MHz), and a radio-frequency linewidth of 2 kHz, while demonstrating a low divergence angle (14.7° × 27.3°) with a twofold butt coupling efficiency to a flat cleaved single mode fiber, compared to the conventional five-quantum-well MLLs.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.19.000B75