Two-dimensional microstructures induced by femtosecond vector light fields on silicon
We have fabricated the complicated two-dimensional subwave-length microstructures induced by the femtosecond vector light fields on silicon. The fabricated microstructures have the interval between two ripples in microstructures to be around 670-690 nm and the depth of the grooves to be about 300 nm...
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| Veröffentlicht in: | Optics express 2012-01, Vol.20 (1), p.120-127 |
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| container_title | Optics express |
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| creator | Lou, Kai Qian, Sheng-Xia Wang, Xi-Lin Li, Yongnan Gu, Bing Tu, Chenghou Wang, Hui-Tian |
| description | We have fabricated the complicated two-dimensional subwave-length microstructures induced by the femtosecond vector light fields on silicon. The fabricated microstructures have the interval between two ripples in microstructures to be around 670-690 nm and the depth of the grooves to be about 300 nm when the pulse fluence of 0.26 J/cm2 is slightly higher than the ablated threshold of 0.2 J/cm2 for silicon under the irradiation of 100 pulses. The ripples are always perpendicular to the direction of the locally linear polarization. The designable spatial structure of polarization of the femtosecond vector light field can be used to manipulate the fabricated microstructure. |
| doi_str_mv | 10.1364/oe.20.000120 |
| format | Article |
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The fabricated microstructures have the interval between two ripples in microstructures to be around 670-690 nm and the depth of the grooves to be about 300 nm when the pulse fluence of 0.26 J/cm2 is slightly higher than the ablated threshold of 0.2 J/cm2 for silicon under the irradiation of 100 pulses. The ripples are always perpendicular to the direction of the locally linear polarization. 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The designable spatial structure of polarization of the femtosecond vector light field can be used to manipulate the fabricated microstructure.</description><subject>Light</subject><subject>Materials Testing</subject><subject>Radiation Dosage</subject><subject>Refractometry - methods</subject><subject>Silicon - chemistry</subject><subject>Silicon - radiation effects</subject><subject>Surface Properties - radiation effects</subject><issn>1094-4087</issn><issn>1094-4087</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNpNkM1LwzAYxoMobk5vniU3L3bmq01zlDE_YLDLdg5p8lYjbTOTVtl_b2VTPL0PvD8eeH4IXVMyp7wQ9wHmjMwJIZSREzSlRIlMkFKe_ssTdJHS-4gIqeQ5mjDGpOA8n6Lt5itkzrfQJR860-DW2xhSHwfbDxES9p0bLDhc7XENbR8S2NA5_Am2DxE3_vWtx7WHxiUcOpx848f_JTqrTZPg6nhnaPu43Cyes9X66WXxsMqs4LLPCirqWoIRloKgeZUbJYQslSwIEOZoThVU1JWmVDnPnTHgisJYJXNSFqUp-AzdHnp3MXwMkHrd-mShaUwHYUha0ZJwwYp8JO8O5M-6FKHWu-hbE_eaEv3jUa-XmhF98DjiN8fioWrB_cG_4vg32vluXw</recordid><startdate>20120102</startdate><enddate>20120102</enddate><creator>Lou, Kai</creator><creator>Qian, Sheng-Xia</creator><creator>Wang, Xi-Lin</creator><creator>Li, Yongnan</creator><creator>Gu, Bing</creator><creator>Tu, Chenghou</creator><creator>Wang, Hui-Tian</creator><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20120102</creationdate><title>Two-dimensional microstructures induced by femtosecond vector light fields on silicon</title><author>Lou, Kai ; Qian, Sheng-Xia ; Wang, Xi-Lin ; Li, Yongnan ; Gu, Bing ; Tu, Chenghou ; Wang, Hui-Tian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c437t-614ff7ea4c1e415b5a944789760e02d1519eb1d8a89535daaed66ac9750868a63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Light</topic><topic>Materials Testing</topic><topic>Radiation Dosage</topic><topic>Refractometry - methods</topic><topic>Silicon - chemistry</topic><topic>Silicon - radiation effects</topic><topic>Surface Properties - radiation effects</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lou, Kai</creatorcontrib><creatorcontrib>Qian, Sheng-Xia</creatorcontrib><creatorcontrib>Wang, Xi-Lin</creatorcontrib><creatorcontrib>Li, Yongnan</creatorcontrib><creatorcontrib>Gu, Bing</creatorcontrib><creatorcontrib>Tu, Chenghou</creatorcontrib><creatorcontrib>Wang, Hui-Tian</creatorcontrib><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Optics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lou, Kai</au><au>Qian, Sheng-Xia</au><au>Wang, Xi-Lin</au><au>Li, Yongnan</au><au>Gu, Bing</au><au>Tu, Chenghou</au><au>Wang, Hui-Tian</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Two-dimensional microstructures induced by femtosecond vector light fields on silicon</atitle><jtitle>Optics express</jtitle><addtitle>Opt Express</addtitle><date>2012-01-02</date><risdate>2012</risdate><volume>20</volume><issue>1</issue><spage>120</spage><epage>127</epage><pages>120-127</pages><issn>1094-4087</issn><eissn>1094-4087</eissn><abstract>We have fabricated the complicated two-dimensional subwave-length microstructures induced by the femtosecond vector light fields on silicon. 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| source | MEDLINE; DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Alma/SFX Local Collection |
| subjects | Light Materials Testing Radiation Dosage Refractometry - methods Silicon - chemistry Silicon - radiation effects Surface Properties - radiation effects |
| title | Two-dimensional microstructures induced by femtosecond vector light fields on silicon |
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