Two-dimensional microstructures induced by femtosecond vector light fields on silicon

We have fabricated the complicated two-dimensional subwave-length microstructures induced by the femtosecond vector light fields on silicon. The fabricated microstructures have the interval between two ripples in microstructures to be around 670-690 nm and the depth of the grooves to be about 300 nm when the pulse fluence of 0.26 J/cm2 is slightly higher than the ablated threshold of 0.2 J/cm2 for silicon under the irradiation of 100 pulses. The ripples are always perpendicular to the direction of the locally linear polarization. The designable spatial structure of polarization of the femtosecond vector light field can be used to manipulate the fabricated microstructure.