A Si BiCMOS transimpedance amplifier for 10-Gb/s SONET receiver

A Si BiCMOS transimpedance amplifier for 10-Gb/s SONET receiver

A transimpedance amplifier packaged with an InP p-i-n photodiode has been demonstrated for 10-Gb/s SONET receiver. The shunt feedback transimpedance amplifier is fabricated in 0.25-/spl mu/m modular Si BiCMOS technology. The transimpedance of 55 dB/spl Omega/ is achieved at a bandwidth of 9 GHz by a...

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Veröffentlicht in:IEEE journal of solid-state circuits 2001-05, Vol.36 (5), p.769-776
Hauptverfasser: Kim, H.H., Chandrasekhar, S., Burrus, C.A., Bauman, J.
Format: Artikel
Sprache:eng
Schlagworte:
Amplifiers
Bandwidth
BiCMOS integrated circuits
Bypasses
Circuits
Indium phosphide
Modular
Optical amplifiers
Optical feedback
Optical filters
Optical receivers
Packaging
Photodiodes
PIN photodiodes
Receivers
Shunts
Silicon
SONET
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Beschreibung
Zusammenfassung:A transimpedance amplifier packaged with an InP p-i-n photodiode has been demonstrated for 10-Gb/s SONET receiver. The shunt feedback transimpedance amplifier is fabricated in 0.25-/spl mu/m modular Si BiCMOS technology. The transimpedance of 55 dB/spl Omega/ is achieved at a bandwidth of 9 GHz by applying shunt peaking and filter termination at the input. The optical sensitivity of -17 dBm was measured at 10 Gb/s for a bit-error rate of 10/sup -12/.
ISSN:0018-9200
1558-173X
DOI:10.1109/4.918914