Electrical Properties of Acceptor Doped BaTiO sub(3)

Electrical properties of acceptor (Mn, Mg or Mn+Mg)-doped BaTiO sub(3) ceramic have been studied in terms of oxygen vacancy concentration, various doping levels and electrical degradation behaviors. The solubility limit of Mn on Ti sites was confirmed to be close to or less than 1.0 mol%. Oxygen vacancy concentration of Ba(Ti sub(0.995 -x)Mg sub(0.005) Mn sub(x))O sub(2.995 -y) (x = 0, 0.005, 0.01) was estimated to be 50 times greater than that of the un-doped BaTiO sub(3). The leakage current of 0.5 mol% Mn-doped BaTiO sub(3) was stable with time, which was much lower than that of the un-doped BaTiO sub(3). The BaTiO sub(3) specimen co-doped with 0.5 mol% Mg and 1.0 mol% Mn showed the lowest leakage current below 10 super(- 10)A. It was confirmed that leakage currents of Mg-doped and un-doped BaTiO sub(3) under dc field are effectively suppressed by Mn co-doping as long as the Mn doping level is greater than Mg contents.