Optical characterisation of a-Si:H and nc-Si: H thin films using the transmission spectrum alone

Optical characterisation of a-Si:H and nc-Si: H thin films using the transmission spectrum alone

Using the method proposed by Swanepoel (J Phys E: Sci Instrum 17:896-903, 1984), a-Si:H and nc-Si:H thin films have been successfully characterised using the transmission spectrum alone as taken in the UV-visible range. The studied samples were deposited on both Corning glass and Polyethylene naptha...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2007-10, Vol.18 (S1), p.225-229
Hauptverfasser: HALINDINTWALI, S, KNOESEN, D, MULLER, T. F. G, ADAMS, D, TILE, N, THERON, C. C, SCHROPP, R. E. I
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Chemical vapor deposition
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Deposition
Electronics
Energy gap
Exact sciences and technology
Materials
Materials science
Mathematical analysis
Methods of deposition of films and coatings
film growth and epitaxy
Microelectronic fabrication (materials and surfaces technology)
Physics
Profilometers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thin films
Wire
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Zusammenfassung:Using the method proposed by Swanepoel (J Phys E: Sci Instrum 17:896-903, 1984), a-Si:H and nc-Si:H thin films have been successfully characterised using the transmission spectrum alone as taken in the UV-visible range. The studied samples were deposited on both Corning glass and Polyethylene napthalate (PEN) substrates using the Hot Wire Chemical Vapour deposition technique (HWCVD). Results on refractive index, absorption coefficient and energy gap will be presented. Thicknesses calculated by the same method will be compared to those obtained by direct measurement using a Dektak profilometer.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-007-9194-8