Design and characterization of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers

Design and characterization of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers

A comprehensive design method for long wavelength strained quantum-well lasers is applied to design uncooled multiple-quantum-well AlGaInAs-InP 1.3- mu m lasers for communication systems. The method includes multiband effective mass theory and electromagnetic waveguide theory. The resulting AlGaInAs...

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Veröffentlicht in:IEEE journal of selected topics in quantum electronics 2001-03, Vol.7 (2), p.340-349
Hauptverfasser: Selmic, S.R., Tso-Min Chou, Jiehping Sih, Kirk, J.B., Mantle, A., Butler, J.K., Bour, D., Evans, G.A.
Format: Artikel
Sprache:eng
Schlagworte:
Beams (radiation)
Communication systems
Design engineering
Lasers
Quantum electronics
Quantum wells
Threshold currents
Wavelengths
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Zusammenfassung:A comprehensive design method for long wavelength strained quantum-well lasers is applied to design uncooled multiple-quantum-well AlGaInAs-InP 1.3- mu m lasers for communication systems. The method includes multiband effective mass theory and electromagnetic waveguide theory. The resulting AlGaInAs-InP laser has a threshold current of 12.5 mA at 25 degree C, with a slope efficiency of 0.43 W/A, at 77 K or greater characteristic temperature, a 38 degree perpendicular far-field beam divergence, and will operate at temperatures in excess of 100 degree C
ISSN:1077-260X
DOI:10.1109/2944.954148