Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility
In this letter, it is shown that for fin widths down to < 20 nm, strain can be retained in patterned strained-silicon-on-insulator (sSOI) films and is correlated to mobility enhancements observed in FinFET devices. NMOS FinFET mobility is improved by 60% and 30% for [110]/ and (100)/ fin surface/...
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| Veröffentlicht in: | IEEE electron device letters 2006-07, Vol.27 (7), p.612-614 |
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| container_title | IEEE electron device letters |
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| creator | Xiong, W. Cleavelin, C.R. Kohli, P. Huffman, C. Schulz, T. Schruefer, K. Gebara, G. Mathews, K. Patruno, P. Le Vaillant, Y.-M. Cayrefourcq, I. Kennard, M. Mazure, C. Shin, K. Liu, T.-J.K. |
| description | In this letter, it is shown that for fin widths down to < 20 nm, strain can be retained in patterned strained-silicon-on-insulator (sSOI) films and is correlated to mobility enhancements observed in FinFET devices. NMOS FinFET mobility is improved by 60% and 30% for [110]/ and (100)/ fin surface/direction, respectively. Although PMOS FinFET mobility is degraded by 35% for [110]/ fins, it is enhanced by up to 30% for (100)/ fins. These results can be qualitatively explained using the bulk-Si piezoresistance coefficients. |
| doi_str_mv | 10.1109/LED.2006.877714 |
| format | Article |
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NMOS FinFET mobility is improved by 60% and 30% for [110]/ and (100)/ fin surface/direction, respectively. Although PMOS FinFET mobility is degraded by 35% for [110]/ fins, it is enhanced by up to 30% for (100)/ fins. These results can be qualitatively explained using the bulk-Si piezoresistance coefficients.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2006.877714</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitive sensors ; Compound structure devices ; Correlation ; Degradation ; Devices ; Electronics ; Etching ; Exact sciences and technology ; FinFET ; FinFETs ; Fins ; insulated gate FETs ; Insulation ; MOS devices ; Piezoresistance ; Raman scattering ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon on insulator technology ; silicon-on-insulator (SOI) technology ; Spectroscopy ; Strain ; strained-silicon ; Transistors</subject><ispartof>IEEE electron device letters, 2006-07, Vol.27 (7), p.612-614</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2006</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c416t-385f78e4cc75f05028f73af912676475f1c7c6a5fea8b62c8fc273a31d7a01623</citedby><cites>FETCH-LOGICAL-c416t-385f78e4cc75f05028f73af912676475f1c7c6a5fea8b62c8fc273a31d7a01623</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1644843$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1644843$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17941503$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Xiong, W.</creatorcontrib><creatorcontrib>Cleavelin, C.R.</creatorcontrib><creatorcontrib>Kohli, P.</creatorcontrib><creatorcontrib>Huffman, C.</creatorcontrib><creatorcontrib>Schulz, T.</creatorcontrib><creatorcontrib>Schruefer, K.</creatorcontrib><creatorcontrib>Gebara, G.</creatorcontrib><creatorcontrib>Mathews, K.</creatorcontrib><creatorcontrib>Patruno, P.</creatorcontrib><creatorcontrib>Le Vaillant, Y.-M.</creatorcontrib><creatorcontrib>Cayrefourcq, I.</creatorcontrib><creatorcontrib>Kennard, M.</creatorcontrib><creatorcontrib>Mazure, C.</creatorcontrib><creatorcontrib>Shin, K.</creatorcontrib><creatorcontrib>Liu, T.-J.K.</creatorcontrib><title>Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>In this letter, it is shown that for fin widths down to < 20 nm, strain can be retained in patterned strained-silicon-on-insulator (sSOI) films and is correlated to mobility enhancements observed in FinFET devices. NMOS FinFET mobility is improved by 60% and 30% for [110]/ and (100)/ fin surface/direction, respectively. Although PMOS FinFET mobility is degraded by 35% for [110]/ fins, it is enhanced by up to 30% for (100)/ fins. These results can be qualitatively explained using the bulk-Si piezoresistance coefficients.</description><subject>Applied sciences</subject><subject>Capacitive sensors</subject><subject>Compound structure devices</subject><subject>Correlation</subject><subject>Degradation</subject><subject>Devices</subject><subject>Electronics</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>FinFET</subject><subject>FinFETs</subject><subject>Fins</subject><subject>insulated gate FETs</subject><subject>Insulation</subject><subject>MOS devices</subject><subject>Piezoresistance</subject><subject>Raman scattering</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon on insulator technology</subject><subject>silicon-on-insulator (SOI) technology</subject><subject>Spectroscopy</subject><subject>Strain</subject><subject>strained-silicon</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkM1LAzEQxYMoWKtnD14WQdTDtpnNZ49SWy0WelDPS5omkLK7qcnuof-9WVYoCAMD837vMTyEbgFPAPBsul68TgqM-UQKIYCeoREwJnPMODlHIywo5AQwv0RXMe4xBkoFHaGPVX1Qus28zWIblGvMLo-ucto3eRrXxK5SrQ_ZU_zcrJ6z2G17rjWZb7Kla5aLr6z22-Roj9fowqoqmpu_PUbfSZ6_5-vN22r-ss41Bd7mRDIrpKFaC2Yxw4W0gig7g4ILTtMNtNBcMWuU3PJCS6uLBBDYCYWBF2SMHofcQ_A_nYltWbuoTVWpxvguljOgnDGgMpH3_8i970KTnktQAQC06OOmA6SDjzEYWx6Cq1U4loDLvtoyVVv21ZZDtcnx8BerolaVDarRLp5sYkaBYZK4u4FzxpiTzCmVlJBfQZh_hg</recordid><startdate>20060701</startdate><enddate>20060701</enddate><creator>Xiong, W.</creator><creator>Cleavelin, C.R.</creator><creator>Kohli, P.</creator><creator>Huffman, C.</creator><creator>Schulz, T.</creator><creator>Schruefer, K.</creator><creator>Gebara, G.</creator><creator>Mathews, K.</creator><creator>Patruno, P.</creator><creator>Le Vaillant, Y.-M.</creator><creator>Cayrefourcq, I.</creator><creator>Kennard, M.</creator><creator>Mazure, C.</creator><creator>Shin, K.</creator><creator>Liu, T.-J.K.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon on insulator technology</topic><topic>silicon-on-insulator (SOI) technology</topic><topic>Spectroscopy</topic><topic>Strain</topic><topic>strained-silicon</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xiong, W.</creatorcontrib><creatorcontrib>Cleavelin, C.R.</creatorcontrib><creatorcontrib>Kohli, P.</creatorcontrib><creatorcontrib>Huffman, C.</creatorcontrib><creatorcontrib>Schulz, T.</creatorcontrib><creatorcontrib>Schruefer, K.</creatorcontrib><creatorcontrib>Gebara, G.</creatorcontrib><creatorcontrib>Mathews, K.</creatorcontrib><creatorcontrib>Patruno, P.</creatorcontrib><creatorcontrib>Le Vaillant, Y.-M.</creatorcontrib><creatorcontrib>Cayrefourcq, I.</creatorcontrib><creatorcontrib>Kennard, M.</creatorcontrib><creatorcontrib>Mazure, C.</creatorcontrib><creatorcontrib>Shin, K.</creatorcontrib><creatorcontrib>Liu, T.-J.K.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Xiong, W.</au><au>Cleavelin, C.R.</au><au>Kohli, P.</au><au>Huffman, C.</au><au>Schulz, T.</au><au>Schruefer, K.</au><au>Gebara, G.</au><au>Mathews, K.</au><au>Patruno, P.</au><au>Le Vaillant, Y.-M.</au><au>Cayrefourcq, I.</au><au>Kennard, M.</au><au>Mazure, C.</au><au>Shin, K.</au><au>Liu, T.-J.K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2006-07-01</date><risdate>2006</risdate><volume>27</volume><issue>7</issue><spage>612</spage><epage>614</epage><pages>612-614</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>In this letter, it is shown that for fin widths down to < 20 nm, strain can be retained in patterned strained-silicon-on-insulator (sSOI) films and is correlated to mobility enhancements observed in FinFET devices. NMOS FinFET mobility is improved by 60% and 30% for [110]/ and (100)/ fin surface/direction, respectively. Although PMOS FinFET mobility is degraded by 35% for [110]/ fins, it is enhanced by up to 30% for (100)/ fins. These results can be qualitatively explained using the bulk-Si piezoresistance coefficients.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2006.877714</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 2006-07, Vol.27 (7), p.612-614 |
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| subjects | Applied sciences Capacitive sensors Compound structure devices Correlation Degradation Devices Electronics Etching Exact sciences and technology FinFET FinFETs Fins insulated gate FETs Insulation MOS devices Piezoresistance Raman scattering Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon on insulator technology silicon-on-insulator (SOI) technology Spectroscopy Strain strained-silicon Transistors |
| title | Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility |
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