Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility

In this letter, it is shown that for fin widths down to < 20 nm, strain can be retained in patterned strained-silicon-on-insulator (sSOI) films and is correlated to mobility enhancements observed in FinFET devices. NMOS FinFET mobility is improved by 60% and 30% for [110]/ and (100)/ fin surface/...

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Veröffentlicht in:	IEEE electron device letters 2006-07, Vol.27 (7), p.612-614
Hauptverfasser:	Xiong, W., Cleavelin, C.R., Kohli, P., Huffman, C., Schulz, T., Schruefer, K., Gebara, G., Mathews, K., Patruno, P., Le Vaillant, Y.-M., Cayrefourcq, I., Kennard, M., Mazure, C., Shin, K., Liu, T.-J.K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitive sensors Compound structure devices Correlation Degradation Devices Electronics Etching Exact sciences and technology FinFET FinFETs Fins insulated gate FETs Insulation MOS devices Piezoresistance Raman scattering Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon on insulator technology silicon-on-insulator (SOI) technology Spectroscopy Strain strained-silicon Transistors
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Beschreibung
Zusammenfassung:	In this letter, it is shown that for fin widths down to < 20 nm, strain can be retained in patterned strained-silicon-on-insulator (sSOI) films and is correlated to mobility enhancements observed in FinFET devices. NMOS FinFET mobility is improved by 60% and 30% for [110]/ and (100)/ fin surface/direction, respectively. Although PMOS FinFET mobility is degraded by 35% for [110]/ fins, it is enhanced by up to 30% for (100)/ fins. These results can be qualitatively explained using the bulk-Si piezoresistance coefficients.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2006.877714