Reliability of microwave SiGe/Si heterojunction bipolar transistors

The degradation behavior of NPN Si/SiGe/Si heterojunction bipolar transistors, grown by solid-source molecular beam epitaxy (MBE), has been studied by accelerated lifetime testing at different ambient temperatures. The degradations of the dc current gain and the microwave performance of the devices...

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Veröffentlicht in:IEEE microwave and wireless components letters 2001-10, Vol.11 (10), p.401-403
Hauptverfasser: Zhenqiang Ma, Bhattacharya, P., Jae-Sung Rieh, Ponchak, G.E., Alterovitz, S.A., Croke, E.T.
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Sprache:eng
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Zusammenfassung:The degradation behavior of NPN Si/SiGe/Si heterojunction bipolar transistors, grown by solid-source molecular beam epitaxy (MBE), has been studied by accelerated lifetime testing at different ambient temperatures. The degradations of the dc current gain and the microwave performance of the devices are explained in terms of recombination enhanced impurity diffusion (REID) of boron atoms from the base region and the subsequent formation of parasitic energy barriers at the base-emitter and base-collector junctions.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/7260.959308