The Mott Transition Field Effect Transistor: A Nanodevice?

The Mott Transition Field Effect Transistor: A Nanodevice?

A field effect transistor device (FET), consisting of a nonlinear Mott Insulator channel material, and a high dielectric-constant gate oxide, is explored as a nanoscale device. Experimental functionality of a large scale prototype (5 μm channel length) has been demonstrated. The underlying physics o...

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Veröffentlicht in:Journal of electroceramics 2000-06, Vol.4 (2-3), p.339-344
Hauptverfasser: Newns, Dm, Doderer, T, Tsuei, Cc, Donath, Wm, Misewich, Ja, Gupta, A, Grossman, Bm, Schrott, A, Scott, Ba, Pattnaik, Pc, von Gutfeld, Rj, Sun, Jz
Format: Artikel
Sprache:eng
Schlagworte:
Channels
Devices
Field effect transistors
Nanocomposites
Nanomaterials
Nanostructure
Oxides
Semiconductor devices
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Zusammenfassung:A field effect transistor device (FET), consisting of a nonlinear Mott Insulator channel material, and a high dielectric-constant gate oxide, is explored as a nanoscale device. Experimental functionality of a large scale prototype (5 μm channel length) has been demonstrated. The underlying physics of the device is analyzed and modeled using a time-dependent Hartree approach. Timing estimates suggest a relatively short switching time.[PUBLICATION ABSTRACT]
ISSN:1385-3449
1573-8663
DOI:10.1023/A:1009914609532