Transport properties in MnAs-precipitated GaMnAs layers

The transport properties of MnGaAs layers embedded with MnAs clusters have been investigated. It was demonstrated that the presence of MnAs clusters in GaMnAs matrix leads to appearance of photoconductivity and absorption current. These phenomena are related to carrier localization effects at the ba...

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Veröffentlicht in:	Journal of electroceramics 2006-12, Vol.17 (2-4), p.1047-1050
Hauptverfasser:	PARCHINSKIY, P. B, FU CHENG YU, CUNXU GAO, SUNG WOOK LEE, KIM, Dojin, KIM, Hyojin, YOUNG EON IHM
Format:	Artikel
Sprache:	eng
Schlagworte:	Bending Carriers Ceramics Clusters Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic transport in condensed matter Exact sciences and technology Localization Photoconduction and photovoltaic effects photodielectric effects Photoconductivity Physics Position (location) Transport properties
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Beschreibung
Zusammenfassung:	The transport properties of MnGaAs layers embedded with MnAs clusters have been investigated. It was demonstrated that the presence of MnAs clusters in GaMnAs matrix leads to appearance of photoconductivity and absorption current. These phenomena are related to carrier localization effects at the band bending in the vicinity of the cluster-matrix interface.
ISSN:	1385-3449 1573-8663
DOI:	10.1007/s10832-006-8914-4