Impact of joint materials on the reliability of double-side packaged SiC power devices during high temperature aging

The impact of packaging materials on the joint reliability of double-side packaged SiC power devices has been investigated at 250 °C for up to 2,000 h. The SiC Schottky Barrier Diode (SBD) power device was double-side packaged with different solders such as Au-20wt.%Sn and Pb-10wt.%Sn or Ag paste. The mechanical and electrical properties of the packaged devices were then aged at 250 °C to evaluate the high-temperature joint reliability. An investigation of the fracture modes of the package after high temperature aging is presented. Moreover, the effect of aging time on the electrical resistance of both SBD electrodes was studied and correlated with the results of the mechanical analysis. The double-side packaged SiC-SBDs packaged with Au-20wt.%Sn solder are more reliable after high temperature aging than SiC-SBDs bonded with Pb-10wt.%Sn solders or Ag paste.