Preparation and ferroelectric properties of (124)-oriented SrBi sub(4)Ti sub(4)O sub(1 5) ferroelectric thin film on (110)-oriented LaNiO sub(3) electrode

A (124)-oriented SrBi sub(4)Ti sub(4)O sub(1 5) (SBTi) ferroelectric thin film with high volume fraction of alpha ( 124 ) rm SBTi = 97 % was obtained using a metal organic decomposition process on SiO sub(2)/Si substrate coated by (110)-oriented LaNiO sub(3) (LNO) thin film. The remanent polarization (P sub(r)) and coercive field (E sub(c)) for (124)-oriented SBTi film are 12.1 mu C/cm super(2) and 74 kV/cm, respectively. No evident fatigue of (124)-oriented SBTi thin film can be observed after 1 10 super(9) switching cycles. Besides, the (124)-oriented SBTi film can be uniformly polarized over large areas using a piezoelectric-mode atomic force microscope. Considering that the annealing temperature was 650 degree C and the thickness of each deposited layer was merely 30 nm, a long-range epitaxial relationship between SBTi(124) and LNO(110) facets was proposed. The epitaxial relationship was demonstrated based on the crystal structures of SBTi and LNO.