Tunneling statistics and the manufacturability of semiconductor tunnel devices

Progress on a semiconductor growth procedure that ensures reproducible and uniform device fabrication is reported. The procedure gives high reproducibility, wafer-to-wafer, of layer thicknesses. Further work is needed to provide cheap, rapid, non-destructive materials analysis methods for use as par...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2001-06, Vol.12 (4-6), p.255-257
Hauptverfasser: Hayden, R K, Kelly, M J
Format: Artikel
Sprache:eng
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Zusammenfassung:Progress on a semiconductor growth procedure that ensures reproducible and uniform device fabrication is reported. The procedure gives high reproducibility, wafer-to-wafer, of layer thicknesses. Further work is needed to provide cheap, rapid, non-destructive materials analysis methods for use as part of the semiconductor device manufacturing process.[PUBLICATION ABSTRACT]
ISSN:0957-4522
1573-482X
DOI:10.1023/A:1011215521469