Tunneling statistics and the manufacturability of semiconductor tunnel devices
Progress on a semiconductor growth procedure that ensures reproducible and uniform device fabrication is reported. The procedure gives high reproducibility, wafer-to-wafer, of layer thicknesses. Further work is needed to provide cheap, rapid, non-destructive materials analysis methods for use as par...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2001-06, Vol.12 (4-6), p.255-257 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | Progress on a semiconductor growth procedure that ensures reproducible and uniform device fabrication is reported. The procedure gives high reproducibility, wafer-to-wafer, of layer thicknesses. Further work is needed to provide cheap, rapid, non-destructive materials analysis methods for use as part of the semiconductor device manufacturing process.[PUBLICATION ABSTRACT] |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1023/A:1011215521469 |