12 GHz F rm MAX GaN/AlN/AlGaN Nanowire MISFET

GaN/AlN/AlGaN/GaN nanowire metal-insulator-semiconductor field-effect transistors (MISFETs) have been fabricated for the first time with submicrometer gate lengths. Their microwave performances were investigated. An intrinsic current-gain cutoff frequency (F sub(T)) of 5 GHz as well as an intrinsic maximum available gain (F sub(MAX)) cutoff frequency of 12 GHz have been obtained for the first time and associated with a gate length of 0.5 mum. These results show the great potentiality of GaN-based nanowire FETs for microwave applications.