Universal-V sub(dd) 0.65-2.0-V 32-kB cache using a voltage-adapted timing-generation scheme and a lithographically symmetrical cell

A universal-V sub(dd) 32-kB four-way-set-associative embedded cache has been developed. A test cache chip was fabricated by using 0.18- mu m enhanced CMOS technology, and it was found to continuously operate from 0.65 to 2.0 V. Its operating frequency and power are from 120 MHz and 1.7 mW at 0.65 V...

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Veröffentlicht in:IEEE journal of solid-state circuits 2001-11, Vol.36 (11), p.1738-1744
Hauptverfasser: Osada, K, Shin, J L, Khan, M, Liou, Y, Wang, K, Shoji, K, Kuroda, K, Ikeda, S, Ishibashi, K
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Sprache:eng
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Zusammenfassung:A universal-V sub(dd) 32-kB four-way-set-associative embedded cache has been developed. A test cache chip was fabricated by using 0.18- mu m enhanced CMOS technology, and it was found to continuously operate from 0.65 to 2.0 V. Its operating frequency and power are from 120 MHz and 1.7 mW at 0.65 V to 1.04 GHz and 530 mW at 2.0 V. The cache is based on two new circuit techniques: a voltage-adapted timing-generation scheme with plural dummy cells for the wider voltage-range operation, and use of a lithographically symmetrical cell for lower voltage operation.
ISSN:0018-9200
DOI:10.1109/4.962296