A 900-MHz 1-V CMOS frequency synthesizer
A 900-MHz 1-V frequency synthesizer has been fabricated in a standard 0.35-/spl mu/m CMOS technology. The frequency synthesizer consists of a divide-by-128/129 and 64/65 dual-modulus prescaler, phase-frequency detector, charge pump, and voltage-doubler circuit with an external voltage-controlled osc...
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Veröffentlicht in: | IEEE journal of solid-state circuits 2000-08, Vol.35 (8), p.1211-1214 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A 900-MHz 1-V frequency synthesizer has been fabricated in a standard 0.35-/spl mu/m CMOS technology. The frequency synthesizer consists of a divide-by-128/129 and 64/65 dual-modulus prescaler, phase-frequency detector, charge pump, and voltage-doubler circuit with an external voltage-controlled oscillator (VCO) and passive loop filter. The on-chip voltage-doubler circuit converts the 1-V supply voltage to the higher voltage which supplies the prescaler internally. In this way, the 900-MHz 1-V frequency synthesizer with an external VCO can be achieved. The measured phase noise is -112.7 dBc/Hz at a 100-kHz offset from the carrier, and the synthesizer dissipates 3.56 mW (not including VCOs) from a single 1-V supply when the switching frequency of the on-chip voltage doubler is 200 kHz and the power efficiency of the voltage doubler is 77.8%. The total chip area occupies 0.73 mm/sup 2/. |
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ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/4.859512 |