Light-hadron induced SER and scaling relations for 16- and 64-Mb DRAMS
We report on soft error rates (SER) of 16 and 64 Mb dynamic memory chips induced by three types of elementary particles, neutrons, protons, and pions, with emphasis on results obtained with pion beams. Significant SER differences, up to a factor 1000, are seen between various manufacturers and cell...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2000-04, Vol.47 (2), p.403-407 |
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| container_end_page | 407 |
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| container_title | IEEE transactions on nuclear science |
| container_volume | 47 |
| creator | Hofman, G.J. Peterson, R.J. Gelderloos, C.J. Ristinen, R.A. Nelson, M.E. Thompson, A. Ziegler, J.F. Mullfeld, H. |
| description | We report on soft error rates (SER) of 16 and 64 Mb dynamic memory chips induced by three types of elementary particles, neutrons, protons, and pions, with emphasis on results obtained with pion beams. Significant SER differences, up to a factor 1000, are seen between various manufacturers and cell technologies. We discuss reaction mechanisms and by comparing SER rates to nuclear reaction cross sections present guidelines for predicting failure rates. |
| doi_str_mv | 10.1109/23.846273 |
| format | Article |
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| identifier | ISSN: 0018-9499 |
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| issn | 0018-9499 1558-1578 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Cross sections Elementary particles Error analysis Failure rates Guidelines Mesons Neutrons Nuclear reactions Particle beams Pion beams Pions Pollution measurement Protons Random access memory Sea measurements Semiconductor device measurement Soft errors Testing |
| title | Light-hadron induced SER and scaling relations for 16- and 64-Mb DRAMS |
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