Light-hadron induced SER and scaling relations for 16- and 64-Mb DRAMS

Light-hadron induced SER and scaling relations for 16- and 64-Mb DRAMS

We report on soft error rates (SER) of 16 and 64 Mb dynamic memory chips induced by three types of elementary particles, neutrons, protons, and pions, with emphasis on results obtained with pion beams. Significant SER differences, up to a factor 1000, are seen between various manufacturers and cell...

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Veröffentlicht in:IEEE transactions on nuclear science 2000-04, Vol.47 (2), p.403-407
Hauptverfasser: Hofman, G.J., Peterson, R.J., Gelderloos, C.J., Ristinen, R.A., Nelson, M.E., Thompson, A., Ziegler, J.F., Mullfeld, H.
Format: Artikel
Sprache:eng
Schlagworte:
Cross sections
Elementary particles
Error analysis
Failure rates
Guidelines
Mesons
Neutrons
Nuclear reactions
Particle beams
Pion beams
Pions
Pollution measurement
Protons
Random access memory
Sea measurements
Semiconductor device measurement
Soft errors
Testing
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Beschreibung
Zusammenfassung:We report on soft error rates (SER) of 16 and 64 Mb dynamic memory chips induced by three types of elementary particles, neutrons, protons, and pions, with emphasis on results obtained with pion beams. Significant SER differences, up to a factor 1000, are seen between various manufacturers and cell technologies. We discuss reaction mechanisms and by comparing SER rates to nuclear reaction cross sections present guidelines for predicting failure rates.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.846273