A 10.5 Gb/s transimpedance amplifier using capacitive emitter degeneration technique

A 10.5 Gb/s modified shunt-feedback transimpedance amplifier in a commercial 0.35 μm SiGe BiCMOS technology is presented. A capacitive emitter degeneration technique was used to improve the bandwidth performance of the transimpedance amplifier. It achieved a transimpedance gain of 56 dB Ω, a −3 dB b...

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Veröffentlicht in:	Solid-state electronics 2009-08, Vol.53 (8), p.916-919
Hauptverfasser:	Huang, Ji-Chen, Lai, Kuang-Sheng, Hsu, Klaus Y.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Bandwidth Circuit properties Degeneration Density Electric, optical and optoelectronic circuits Electronic circuits Electronics Emitters (electron) Exact sciences and technology Integrated optics. Optical fibers and wave guides Noise levels Optical and optoelectronic circuits Optical receiver analog front-end Optoelectronic devices Photodetector Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon germanides Transimpedance amplifier
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Beschreibung
Zusammenfassung:	A 10.5 Gb/s modified shunt-feedback transimpedance amplifier in a commercial 0.35 μm SiGe BiCMOS technology is presented. A capacitive emitter degeneration technique was used to improve the bandwidth performance of the transimpedance amplifier. It achieved a transimpedance gain of 56 dB Ω, a −3 dB bandwidth of 6.2 GHz with a 0.4 pF input parasitic capacitance value, and a noise current spectral density of 9.46 pA / Hz . The total circuit dissipates 29 mW under a 3.3 V supply, and the chip size is only 0.25 × 0.165 mm 2.
ISSN:	0038-1101 1879-2405
DOI:	10.1016/j.sse.2009.04.031