Ferroelectricity of highly preferentially oriented (BiFeO3)1−x–(BaTiO3)x solid solution film by sol–gel method

(BiFeO 3 ) 1− x –(BaTiO 3 ) x solid solution thin films are grown on Pt/Ti/SiO 2 /Si substrates by chemical solution deposition method. Films with x = 0.00, 0.05 and 0.10 were prepared by annealing at 500°C. X-ray diffraction patterns indicate that the pure BiFeO 3 film adopts random orientation while the solid solution films are highly (100) preferentially oriented. Improved electric property at room temperature was observed in the BaTiO 3 incorporated BiFeO 3 films. The remanent polarization of the film with x = 0.0, 0.05 and 0.10 are 76.6, 51.9 and 19.7 μC/cm 2 respectively under a measuring electric field of 0.94 MV/cm. The BaTiO 3 incorporated BiFeO 3 films show improved fatigue endurance. By the solid solution with BaTiO 3 , the leakage current density is reduced effectively.