Improved wear resistance of Al–15Si alloy with a high current pulsed electron beam treatment

► Firstly, Raman spectra are used to research the variation of Si structure before and after HCPEB treatment for the first time. ► Secondly, a fine structure, namely the precipitation of nanocrystalline Si particles, is formed in the surface layer of the HCPEB-treated sample. ► Thirdly, the relative...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2011-07, Vol.269 (13), p.1499-1505
Hauptverfasser: Hao, Y., Gao, B., Tu, G.F., Li, S.W., Dong, C., Zhang, Z.G.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:► Firstly, Raman spectra are used to research the variation of Si structure before and after HCPEB treatment for the first time. ► Secondly, a fine structure, namely the precipitation of nanocrystalline Si particles, is formed in the surface layer of the HCPEB-treated sample. ► Thirdly, the relative wear resistance of an Al-15Si alloy surface is effectively enhanced by a factor of 9 after 15 pulse treatment. A hypereutectic Al–15Si alloy (Si 15 wt.%, Al balance) was irradiated by high current pulsed electron beam (HCPEB). The HCPEB treatment causes ultra-rapid heating, melting and cooling at the top surface layer. As a result, the special “halo” microstructure centering on the primary Si phase is formed on the surface due to interdiffusion of Al and Si elements. The composition of the “halo” microstructure is distributed continuously from the center to the edge of the “halo”. Compared to an untreated matrix, the remelted layer underneath the surface presents single contrast because of the compositional homogeneity after HCPEB treatment. The thickness of the remelted layer increases slightly from 4.4 μm (5 pulses) to 5.6 μm (25 pulses). HCPEB treatment broadens and shifts the diffraction peaks of Al and Si. The lattice parameters of Al decreases due to the formation of a supersaturated solid solution of Al in the melted layer. Through analysis of Raman spectra and transmission electron microscopy (TEM), the amorphous Si (a-Si) and nanocrystalline Si are formed in the near-surface region under multiple bombardments of HCPEB. The relative wear resistance of a 15-pulse sample is effectively improved by a factor of 9, which can be attributed to the formation of metastable structures.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2011.04.010