Growth and characterization of (K0.5 Na0.5)NbO3 thin films by a sol–gel method

(K 0.5 Na 0.5 )NbO 3 (KNN) perovskite materials have been developed as a promising lead-free piezoelectric material for environmentally benign piezoelectric devices. KNN films with about 320 nm thickness were fabricated on Pt(111)/SiO 2 /Si(100) substrates by a sol–gel method from stoichiometric and A-site ion excess precursor solutions. Two different annealing methods were also used to investigate the crystallographic evolution of the films. A layer-by-layer annealing process results in highly (001) oriented KNN from the annealing temperature of 550 °C, while the final annealing method leads to weaker crystalline peaks with a random orientation. The KNN films from the K and Na excess precursor solutions show similar crystallization behavior. However, the ferroelectric hysteresis loops of the films were greatly improved by compensating for an A-site vacancy. In particular, the KNN films from K-excess precursor solutions show better ferroelectric properties compared to the films prepared from Na excess solutions.