Construction of graphdiyne nanowires with high-conductivity and mobility

Construction of graphdiyne nanowires with high-conductivity and mobility

GDNWs (graphdiyne nanowires) have successfully been constructed which exhibit a very high quality defect-free surface using the VLS growth process. Measurement of electrical properties showed that the GDNWs produced are excellent semiconductors with a conductivity of 1.9 × 10(3) S m(-1) and a mobili...

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Veröffentlicht in:Dalton transactions : an international journal of inorganic chemistry 2012-01, Vol.41 (3), p.730-733
Hauptverfasser: Qian, Xuemin, Ning, Zhiyuan, Li, Yuliang, Liu, Huibiao, Ouyang, Canbin, Chen, Qing, Li, Yongjun
Format: Artikel
Sprache:eng
Schlagworte:
Conductivity
Construction
Electrical properties
Electronics
Nanowires
Photoelectricity
Resistivity
Semiconductors
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Zusammenfassung:GDNWs (graphdiyne nanowires) have successfully been constructed which exhibit a very high quality defect-free surface using the VLS growth process. Measurement of electrical properties showed that the GDNWs produced are excellent semiconductors with a conductivity of 1.9 × 10(3) S m(-1) and a mobility of 7.1 × 10(2) cm(2) V(-1) s(-1) at room temperature. The results have confirmed that GDNW is indeed a promising and key novel material in electronic and photoelectric fields for both fundamental and potentially practical applications.
ISSN:1477-9226
1477-9234
DOI:10.1039/c1dt11641j