Magnetic linear dichroism in the angular dependence of core-level photoemission from (Ga,Mn)As using hard x rays

We report a study of the electronic properties of the ferromagnetic semiconductor (Ga,Mn)As using magnetic linear dichroism in the angular dependence of Mn 2p photoemission under hard x-ray excitation. Bulk plasmon loss satellites demonstrate that the probed Mn ions are incorporated deep within the...

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Veröffentlicht in:Physical review letters 2011-11, Vol.107 (19), p.197601-197601, Article 197601
Hauptverfasser: Edmonds, K W, van der Laan, G, Farley, N R S, Campion, R P, Gallagher, B L, Foxon, C T, Cowie, B C C, Warren, S, Johal, T K
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Sprache:eng
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Zusammenfassung:We report a study of the electronic properties of the ferromagnetic semiconductor (Ga,Mn)As using magnetic linear dichroism in the angular dependence of Mn 2p photoemission under hard x-ray excitation. Bulk plasmon loss satellites demonstrate that the probed Mn ions are incorporated deep within the GaAs lattice, while the observed large dichroism indicates that the spectra originate from ferromagnetic substitutional Mn. Simulations of the spectra using an Anderson impurity model show that the ferromagnetic Mn 3d electrons of substitutional Mn in (Ga,Mn)As are intermediate between localized and delocalized.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.107.197601