Feedback for multiband stabilization of CS and CG MESFET transistors

A new feedback scheme is used to achieve multiband unconditional stability in common source (CS) and common gate (CG) GaAs MESFET configurations. This technique extends the range of operation of both CG and CS beyond what is currently available. Results based on analytical formulations together with...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2002-04, Vol.12 (4), p.122-124
Hauptverfasser:	Hammad, H.F., Freundorfer, A.P., Antar, Y.M.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Character generation Circuit properties Cutoff frequency Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Feedback Gallium arsenide Impedance Loaded antennas Mathematical analysis MESFETs Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Military computing Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stability analysis Stabilization Testing Transistors
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Beschreibung
Zusammenfassung:	A new feedback scheme is used to achieve multiband unconditional stability in common source (CS) and common gate (CG) GaAs MESFET configurations. This technique extends the range of operation of both CG and CS beyond what is currently available. Results based on analytical formulations together with a description of the feedback design procedures are provided. Several CS and CG stabilized transistors were monolithically fabricated and tested.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/7260.993288