Growth and properties of the ion beam deposited SiO sub(x containing DLC films)

In the present study SiO sub(x containing diamond-like carbon (DLC) films were synthesized by the closed drift ion source from hexamethyldisiloxane vapor. Kinetics of the growth of DLC films was investigated using optical emission spectroscopy (OES). Structure, chemical composition, electrical and o...

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Veröffentlicht in:Vacuum 2009-05, Vol.83, p.S121-S123
Hauptverfasser: Meskinis, S, Andrulevicius, M, Slapikas, K, Iljinas, A, Gudaitis, R, Puiso, J, Tamulevicius, S
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Sprache:eng
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Zusammenfassung:In the present study SiO sub(x containing diamond-like carbon (DLC) films were synthesized by the closed drift ion source from hexamethyldisiloxane vapor. Kinetics of the growth of DLC films was investigated using optical emission spectroscopy (OES). Structure, chemical composition, electrical and optical properties of the synthesized films were studied. The effects of ion beam energy were investigated. The main atomic hydrogen Balmer series lines and the intense broad CH group related peak were detected in the OES spectra registered in-situ during SiO) sub(x) containing diamond-like carbon film synthesis. The intensity ratio of H- beta /CH peaks increased with the increase of applied ion beam energy. It was explained by activation of the dissociation of the hexamethyldisiloxane molecules. Changes of the structure of the diamond-like carbon films were observed for the films deposited under intense dissociation conditions.
ISSN:0042-207X
DOI:10.1016/j.vacuum.2009.01.041