Design of IGBT with integral freewheeling diode

Design of IGBT with integral freewheeling diode

A new power structure integrating a freewheeling diode in the termination region of a punch-through (PT) insulated gate bipolar transistor (IGBT) is presented. The proposed solution requires virtually no silicon area penalty with respect to a standard IGBT. Static and dynamic experimental results sh...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2002-09, Vol.23 (9), p.532-534
Hauptverfasser: Napoli, E., Spirito, P., Strollo, A.G.M., Frisina, F., Fragapane, L., Fagone, D.
Format: Artikel
Sprache:eng
Schlagworte:
Circuit simulation
Composite structures
Costs
Current density
Devices
Diffusion bonding
Diodes
Dynamic structural analysis
Dynamics
Electric potential
Insulated gate bipolar transistors
Numerical simulation
P-i-n diodes
Semiconductor diodes
Silicon
Switching circuits
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A new power structure integrating a freewheeling diode in the termination region of a punch-through (PT) insulated gate bipolar transistor (IGBT) is presented. The proposed solution requires virtually no silicon area penalty with respect to a standard IGBT. Static and dynamic experimental results show the correct behavior of both IGBT and freewheeling diode. Further, it is shown that the lateral diode surrounding the multicellular IGBT can support IGBT direct current with low on-state voltage drop. The operation mechanisms of the composite structure and design techniques to improve structure dynamic behavior are investigated through two-dimensional numerical device simulations.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2002.802590