Electron and hole mobility enhancement in strained SOI by wafer bonding

N- and p-MOSFETs have been fabricated in strained Si-on-SiGe-on-insulator (SSOI) with high (15-25%) Ge content. Wafer bonding and H-induced layer transfer techniques enabled the fabrication of the high Ge content SiGe-on-insulator (SGOI) substrates. Mobility enhancement of 50% for electrons (with 15...

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Veröffentlicht in:	IEEE transactions on electron devices 2002-09, Vol.49 (9), p.1566-1571
Hauptverfasser:	Lijuan Huang, Chu, J.O., Goma, S.A., D'Emic, C.P., Koester, S.J., Canaperi, D.F., Mooney, P.M., Cordes, S.A., Speidell, J.L., Anderson, R.M., Wong, H.-S.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bonding Charge carrier mobility CMOS integrated circuits Devices Germanium Germanium alloys Hole mobility MOSFETs Semiconductor materials Silicon Silicon alloys Silicon germanides Silicon on insulator technology Silicon substrates Wafer bonding Wafers
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