The influence of crystallographic orientation on the wetting of silicon on quartz single crystals

Dynamic hexagonal spreading patterns of small silicon droplets on the basal plane (001) of quartz were observed by video microscopy. A detailed analysis of the hexagonal triple line demonstrates that the patterns show slight chiral distortions that can be attributed to the screw axis of the substrat...

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Veröffentlicht in:	Journal of materials science 2011-05, Vol.46 (10), p.3436-3444
Hauptverfasser:	Weiß, Daniel, Gebensleben, Tim, Diestel, Lisa, Alphei, Lukas, Becker, Verena, Becker, Jörg August
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysis Anisotropy Basal plane Characterization and Evaluation of Materials Chemistry and Materials Science Classical Mechanics Crystal structure Crystallography Crystallography and Scattering Methods Crystals Droplets Etching Materials Science Polymer Sciences Quartz Screws Silicon Single crystals Solid Mechanics Structure Substrates Wetting
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Zusammenfassung:	Dynamic hexagonal spreading patterns of small silicon droplets on the basal plane (001) of quartz were observed by video microscopy. A detailed analysis of the hexagonal triple line demonstrates that the patterns show slight chiral distortions that can be attributed to the screw axis of the substrate crystal. This article reveals the detailed influence of crystal symmetry on the anisotropy of reactive wetting. In this context, a first discussion about the interplay of wetting and etching of a crystal is provided.
ISSN:	0022-2461 1573-4803
DOI:	10.1007/s10853-010-5246-1