Preparation and band-gap modulation in MgxNi1-xO thin films as a function of Mg contents

MgxNi1-xO (x=0.25-0.56) thin films were fabricated by radio frequency (RF) magnetron sputtering on a quartz substrate. The influences of different Mg contents on the bang-gap of MgxNi1-xO thin films have been studied. XRD measurements indicate that the MgxNi1-xO films are of cubic NiO structure with...

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Veröffentlicht in:Thin solid films 2011-05, Vol.519 (15), p.5174-5177
Hauptverfasser: YANG, Zhi-Guo, ZHU, Li-Ping, GUO, Yan-Min, YE, Zhi-Zhen, ZHAO, Bing-Hui
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Sprache:eng
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Zusammenfassung:MgxNi1-xO (x=0.25-0.56) thin films were fabricated by radio frequency (RF) magnetron sputtering on a quartz substrate. The influences of different Mg contents on the bang-gap of MgxNi1-xO thin films have been studied. XRD measurements indicate that the MgxNi1-xO films are of cubic NiO structure with a (111)-preferred orientation. UV-visible transmission spectra show that the absorption edges of thin films shift to short wavelength with increasing Mg content. The band-gap is already in the solar-blind region when the Mg content in the film is 46%. XPS results showed that typical sosoloid of MgxNi1-xO has been prepared without obvious phase separation. The result implies that MgNiO is a promising candidate material for solar-blind UV detection.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2011.01.082