All Solution-Processed, Fully Transparent Resistive Memory Devices

We fabricated all-solution processed, fully transparent resistive random access memory (sol-TRRAM) with a configuration of ITO/GaZnO(GZO)/ITO. All layers, including an active layer and top and bottom ITO electrodes, were deposited on a glass substrate by either spin coating or inkjet printing using...

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Veröffentlicht in:ACS applied materials & interfaces 2011-11, Vol.3 (11), p.4525-4530
Hauptverfasser: Kim, Areum, Song, Keunkyu, Kim, Youngwoo, Moon, Jooho
Format: Artikel
Sprache:eng
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Zusammenfassung:We fabricated all-solution processed, fully transparent resistive random access memory (sol-TRRAM) with a configuration of ITO/GaZnO(GZO)/ITO. All layers, including an active layer and top and bottom ITO electrodes, were deposited on a glass substrate by either spin coating or inkjet printing using a sol–gel solution. Our sol-TRRAM was transparent, with 86.5% transmittance at 550 nm. An initial forming process is unnecessary for the production of transparent memory due to the presence of sufficient inherent nonlattice oxygen ions in the solution-processed GZO layer. The sol-TRRAM also showed reasonable bipolar resistance switching with a low operation current (300 cycles). The main conduction mechanism during the set process can be explained by the trap-controlled space-charge limited conduction, and the resistance change occurred by the modification of the potential barrier height because of the charge injection by Fowler–Nordheim tunneling.
ISSN:1944-8244
1944-8252
DOI:10.1021/am201215e