Technology development of high-quality n-type multicrystalline silicon for next-generation ultra-thin crystalline silicon solar cells

This paper, under the NEDO project, aims at technology development of high-quality, n-type multicrystalline Si wafers. The targets of the technology development are to realize a high minority-carrier lifetime of 1 ms and to apply for a commercial solidification furnace. In particular, real-time obse...

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Veröffentlicht in:Solar energy materials and solar cells 2009-06, Vol.93 (6), p.1139-1142
Hauptverfasser: Dhamrin, M., Saitoh, T., Kamisako, K., Yamada, K., Araki, N., Yamaga, I., Sugimoto, H., Tajima, M.
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container_end_page 1142
container_issue 6
container_start_page 1139
container_title Solar energy materials and solar cells
container_volume 93
creator Dhamrin, M.
Saitoh, T.
Kamisako, K.
Yamada, K.
Araki, N.
Yamaga, I.
Sugimoto, H.
Tajima, M.
description This paper, under the NEDO project, aims at technology development of high-quality, n-type multicrystalline Si wafers. The targets of the technology development are to realize a high minority-carrier lifetime of 1 ms and to apply for a commercial solidification furnace. In particular, real-time observation of the unidirectional solidification process, the effect of quartz crucible quality on the ingots, the quality improvement of n-type Si wafers and evolution to a commercial furnace will be described.
doi_str_mv 10.1016/j.solmat.2009.02.011
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source Elsevier ScienceDirect Journals
subjects Applied sciences
Crucible
Energy
Exact sciences and technology
Furnaces
Lifetime
Multicrystalline silicon
n-type
Natural energy
Photovoltaic conversion
Q1
Silicon
solar cells
Solar cells. Photoelectrochemical cells
Solar energy
solidification
Technology
title Technology development of high-quality n-type multicrystalline silicon for next-generation ultra-thin crystalline silicon solar cells
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