Ru thin film grown on TaN by plasma enhanced atomic layer deposition

Ru thin films were sequentially deposited onto TaN (5 nm) by plasma enhanced atomic layer deposition using Ru(EtCp) 2 and NH 3 as precursors. The effect of growth temperature on the electrical resistivity and morphology of the Ru films were studied. It was found that the Ru films can achieve a low r...

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Veröffentlicht in:	Thin solid films 2009-06, Vol.517 (16), p.4689-4693
Hauptverfasser:	Xie, Qi, Jiang, Yu-Long, Musschoot, Jan, Deduytsche, Davy, Detavernier, Christophe, Van Meirhaeghe, Roland L., Van den Berghe, Sven, Ru, Guo-Ping, Li, Bing-Zong, Qu, Xin-Ping
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic layer deposition Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Diffusion barrier Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Tatalum nitride Theory and models of film growth Thin film structure and morphology Transmission electron microscopy Vapor phase epitaxy growth from vapor phase X-ray diffraction
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Zusammenfassung:	Ru thin films were sequentially deposited onto TaN (5 nm) by plasma enhanced atomic layer deposition using Ru(EtCp) 2 and NH 3 as precursors. The effect of growth temperature on the electrical resistivity and morphology of the Ru films were studied. It was found that the Ru films can achieve a low resistivity of 14 µΩ cm and a low root-mean-square roughness at a growth temperature of 270 °C. The thickness of the underlying TaN film was found to affect the Ru film growth. The oxidation of the very thin TaN film was correlated with the island growth of Ru. Ex and in-situ X-ray diffraction was employed to verify the copper diffusion barrier properties of a Ru (3 nm)/TaN (5 nm) bi-layer structure.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2009.03.001