A Nonvolatile 2-Mbit CBRAM Memory Core Featuring Advanced Read and Program Control

A 2-Mbit CBRAM (Conductive Bridging Random Access Memory) core has been developed utilizing a 90 nm, VDD=1.5 V process technology. The presented design uses an 8F 2 (0.0648 mum 2 ) 1T1CBJ (1-Transistor/1-Conductive Bridging Junction) cell and introduces a fast feedback regulated CBJ read voltage and...

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Veröffentlicht in:	IEEE journal of solid-state circuits 2007-04, Vol.42 (4), p.839-845
Hauptverfasser:	Dietrich, S., Angerbauer, M., Ivanov, M., Gogl, D., Hoenigschmid, H., Kund, M., Liaw, C., Markert, M., Symanczyk, R., Altimime, L., Bournat, S., Mueller, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	1T1CBJ Anodes Applied sciences Bridge circuits Bridging CBRAM Circuits Control systems Cycle time Design. Technologies. Operation analysis. Testing Dummies Electric potential Electrical resistance measurement Electronics Exact sciences and technology Feedback Integrated circuits Integrated circuits by function (including memories and processors) Joining processes Metallization Nonvolatile memory program Random access memory Read-write memory Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors universal memory Voltage Voltage control
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Beschreibung
Zusammenfassung:	A 2-Mbit CBRAM (Conductive Bridging Random Access Memory) core has been developed utilizing a 90 nm, VDD=1.5 V process technology. The presented design uses an 8F 2 (0.0648 mum 2 ) 1T1CBJ (1-Transistor/1-Conductive Bridging Junction) cell and introduces a fast feedback regulated CBJ read voltage and a novel program charge control using dummy cell bleeder devices. Random read/write cycle times les50ns are demonstrated
ISSN:	0018-9200 1558-173X
DOI:	10.1109/JSSC.2007.892207