Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar

In this paper, we present the development of advanced W-band and G-band millimeter-wave monolithic integrated circuits (MMICs) and modules for use in a high-resolution radar system operating at 210 GHz. A W-band frequency multiplier by six as well as a subharmonically pumped 210 GHz dual-gate field-...

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Veröffentlicht in:	IEEE journal of solid-state circuits 2008-10, Vol.43 (10), p.2194-2205
Hauptverfasser:	Tessmann, A., Kallfass, I., Leuther, A., Massler, H., Kuri, M., Riessle, M., Zink, M., Sommer, R., Wahlen, A., Essen, H., Hurm, V., Schlechtweg, M., Ambacher, O.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Circuit properties Circuits Design. Technologies. Operation analysis. Testing Dual-gate FET Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology FETs Field effect MMICs Frequency frequency multiplier G-band grounded coplanar waveguide (GCPW) High electron mobility transistors High power amplifiers high-power amplifier (HPA) Indium compounds Integrated circuits inverse synthetic aperture radar (ISAR) low-noise amplifier (LNA) Metamorphic metamorphic high electron mobility transistor (mHEMT) mHEMTs Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Millimeter wave technology millimeter-wave monolithic integrated circuit (MMIC) MIMICs Mixers Modules Radar Radar systems Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal convertors subharmonically pumped mixer Transistors W-band
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Zusammenfassung:	In this paper, we present the development of advanced W-band and G-band millimeter-wave monolithic integrated circuits (MMICs) and modules for use in a high-resolution radar system operating at 210 GHz. A W-band frequency multiplier by six as well as a subharmonically pumped 210 GHz dual-gate field-effect transistor (FET) mixer and a 105 GHz power amplifier circuit have been successfully realized using our 0.1 mum InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar circuit topology (GCPW). Additionally, a 210 GHz low-noise amplifier MMIC was fabricated using our advanced 0.05 mum mHEMT technology. To package the circuits, a set of waveguide-to-microstrip transitions has been realized on 50 mum thick quartz substrates, covering the frequency range between 75 and 220 GHz. The presented millimeter-wave components were developed for use in a novel 210 GHz radar demonstrator COBRA-210, which delivers an instantaneous bandwidth of 8 GHz and an outstanding spatial resolution of 1.8 cm.
ISSN:	0018-9200 1558-173X
DOI:	10.1109/JSSC.2008.2002931