High-Temperature Dielectrics in the BiScO3-BaTiO3-(K1/2Bi1/2)TiO3 Ternary System

Perovskite solid solution in the (1−x)[0.4BiScO3–0.6BaTiO3]+x (K1/2Bi1/2)TiO3 [BSBT–KBTx] system was synthesized using conventional sintering and hot‐isostatic pressing. Dielectric properties of BSBT ceramics with different dopant levels of KBT were characterized as a function of temperature and fre...

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Veröffentlicht in:Journal of the American Ceramic Society 2009-03, Vol.92 (3), p.679-682
Hauptverfasser: Lim, Jong Bong, Zhang, Shujun, Kim, Namchul, Shrout, Thomas R.
Format: Artikel
Sprache:eng
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Zusammenfassung:Perovskite solid solution in the (1−x)[0.4BiScO3–0.6BaTiO3]+x (K1/2Bi1/2)TiO3 [BSBT–KBTx] system was synthesized using conventional sintering and hot‐isostatic pressing. Dielectric properties of BSBT ceramics with different dopant levels of KBT were characterized as a function of temperature and frequency for potential use of high‐temperature capacitors. The BSBT ceramics with KBT exhibited high dielectric permittivities (ɛr) (>1700 at RT) and low dielectric loss over the temperature range from 100° to 300°C, with flat temperature coefficients of permittivity (TCɛs). In addition, BSBT ceramics with increasing KBT were observed to possess dielectric relaxation characteristics at temperatures (>RT) as observed in lead‐based relaxors. Furthermore, high energy densities, being on the order of 4.0 J/cm3 at 220 kV/cm was observed for the BSBT–KBT20 ceramics from the electric‐field polarization behavior.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1551-2916.2009.02973.x