Growth studies and characterization of silicon nitride thin films deposited by alternating exposures to Si@d2Cl@d6 and NH@d3

We deposited silicon nitride films by alternating exposures to Si@d2Cl@d6 and NH@d3 in a cold-wall reactor, and the growth rate and characteristics were studied with varying process temperature and reactant exposures. The physical and electrical properties of the films were also investigated in comp...

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Veröffentlicht in:	Thin solid films 2009-05, Vol.517 (14), p.3975-3978
Hauptverfasser:	Park, K, Yun, W D, Choi, B J, Kim, H D, Lee, W J, Rha, S K, Park, C O
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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