Growth studies and characterization of silicon nitride thin films deposited by alternating exposures to Si@d2Cl@d6 and NH@d3

We deposited silicon nitride films by alternating exposures to Si@d2Cl@d6 and NH@d3 in a cold-wall reactor, and the growth rate and characteristics were studied with varying process temperature and reactant exposures. The physical and electrical properties of the films were also investigated in comparison with other silicon nitride films. The deposition reaction was self-limiting at process temperature of 515 and 557 @uoC, and the growth rates were 0.24 and 0.28 nm/cycle with Si@d2Cl@d6 exposure over 2x10@u8 L. These growth rates with Si@d2Cl@d6 are higher than that with SiH@d2Cl@d2, and are obtained with reactant exposures lower than those of the SiH@d2Cl@d2 case. At process temperature of 573 @uoC where the wafer temperature during Si@d2Cl@d6 pulse is 513 @uoC, the growth rate increased with Si@d2Cl@d6 exposure owing to thermal deposition of Si@d2Cl@d6. The deposited films are nonstoichiometric SiN, and were easily oxidized by air exposure to contain 7-8 at.% of oxygen in the bulk film. The deposition by using Si@d2Cl@d6 exhibited a higher deposition rate with lower reactant exposures as compared with the deposition by using SiH@d2Cl@d2, and exhibited good physical and electrical properties that were equivalent or superior to those of the film deposited by using SiH@d2Cl@d2.