Metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD
Metamorphic Al0.50In0.50As/Ga0.47In0.53As high electron mobility transistors （mHEMTs） grown by Metal Organic ChemicalVapor Deposition （MOCVD） on n-type silicon substrates with introduction of a novel multi-stage buffering stack scheme havebeen fabricated for the first time. 1.0- m-gate-length deplet...
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| Veröffentlicht in: | Science China. Physics, mechanics & astronomy mechanics & astronomy, 2011-10, Vol.54 (10), p.1815-1818 |
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| container_issue | 10 |
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| container_title | Science China. Physics, mechanics & astronomy |
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| creator | Li, HaiOu Huang, Wei Li, SiMin Tang, ChakWah Lau, KeiMay |
| description | Metamorphic Al0.50In0.50As/Ga0.47In0.53As high electron mobility transistors （mHEMTs） grown by Metal Organic ChemicalVapor Deposition （MOCVD） on n-type silicon substrates with introduction of a novel multi-stage buffering stack scheme havebeen fabricated for the first time. 1.0- m-gate-length depletion-mode mHEMTs with maximum transconductance up to 613mS/mm are achieved. The unity current gain cut-off frequency （fT） and the maximum oscillation frequency （fmax） are 36.9 and55.6 GHz, respectively. This device has the highest fTyet reported for 1.0- m-gate-length HEMTs grown on silicon byMOCVD. Also, this performance is comparable to that of similar GaAs-based mHEMTs. These are encouraging initial resultsleading to the manufacturing potential of integrated high-speed metamorphic devices for logic applications on silicon sub-strates by MOCVD. |
| doi_str_mv | 10.1007/s11433-011-4456-0 |
| format | Article |
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The unity current gain cut-off frequency （fT） and the maximum oscillation frequency （fmax） are 36.9 and55.6 GHz, respectively. This device has the highest fTyet reported for 1.0- m-gate-length HEMTs grown on silicon byMOCVD. Also, this performance is comparable to that of similar GaAs-based mHEMTs. These are encouraging initial resultsleading to the manufacturing potential of integrated high-speed metamorphic devices for logic applications on silicon sub-strates by MOCVD.</description><identifier>ISSN: 1674-7348</identifier><identifier>EISSN: 1869-1927</identifier><identifier>DOI: 10.1007/s11433-011-4456-0</identifier><language>eng</language><publisher>Heidelberg: SP Science China Press</publisher><subject>Astronomy ; Classical and Continuum Physics ; GaInAs ; HEMT器件 ; High electron mobility transistors ; Metalorganic chemical vapor deposition ; MOCVD ; Observations and Techniques ; Organic chemistry ; Physics ; Physics and Astronomy ; Research Paper ; Semiconductor devices ; Silicon ; Silicon substrates ; Transconductance ; 变质 ; 最高振荡频率 ; 硅衬底 ; 金属有机 ; 高电子迁移率晶体管</subject><ispartof>Science China. Physics, mechanics & astronomy, 2011-10, Vol.54 (10), p.1815-1818</ispartof><rights>Science China Press and Springer-Verlag Berlin Heidelberg 2011</rights><rights>Science China Press and Springer-Verlag Berlin Heidelberg 2011.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c514t-348bff276fc725ce04c2aa6001544c06aacd148660467010dd1790db494ea34d3</citedby><cites>FETCH-LOGICAL-c514t-348bff276fc725ce04c2aa6001544c06aacd148660467010dd1790db494ea34d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://image.cqvip.com/vip1000/qk/60109X/60109X.jpg</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11433-011-4456-0$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11433-011-4456-0$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,778,782,27907,27908,41471,42540,51302</link.rule.ids></links><search><creatorcontrib>Li, HaiOu</creatorcontrib><creatorcontrib>Huang, Wei</creatorcontrib><creatorcontrib>Li, SiMin</creatorcontrib><creatorcontrib>Tang, ChakWah</creatorcontrib><creatorcontrib>Lau, KeiMay</creatorcontrib><title>Metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD</title><title>Science China. Physics, mechanics & astronomy</title><addtitle>Sci. China Phys. Mech. Astron</addtitle><addtitle>SCIENCE CHINA Physics, Mechanics ＆ Astronomy</addtitle><description>Metamorphic Al0.50In0.50As/Ga0.47In0.53As high electron mobility transistors （mHEMTs） grown by Metal Organic ChemicalVapor Deposition （MOCVD） on n-type silicon substrates with introduction of a novel multi-stage buffering stack scheme havebeen fabricated for the first time. 1.0- m-gate-length depletion-mode mHEMTs with maximum transconductance up to 613mS/mm are achieved. The unity current gain cut-off frequency （fT） and the maximum oscillation frequency （fmax） are 36.9 and55.6 GHz, respectively. This device has the highest fTyet reported for 1.0- m-gate-length HEMTs grown on silicon byMOCVD. Also, this performance is comparable to that of similar GaAs-based mHEMTs. These are encouraging initial resultsleading to the manufacturing potential of integrated high-speed metamorphic devices for logic applications on silicon sub-strates by MOCVD.</description><subject>Astronomy</subject><subject>Classical and Continuum Physics</subject><subject>GaInAs</subject><subject>HEMT器件</subject><subject>High electron mobility transistors</subject><subject>Metalorganic chemical vapor deposition</subject><subject>MOCVD</subject><subject>Observations and Techniques</subject><subject>Organic chemistry</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Research Paper</subject><subject>Semiconductor devices</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>Transconductance</subject><subject>变质</subject><subject>最高振荡频率</subject><subject>硅衬底</subject><subject>金属有机</subject><subject>高电子迁移率晶体管</subject><issn>1674-7348</issn><issn>1869-1927</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kDFvwjAQhaOqlYooP6Bbqg6dUu5sx8ZLJUQpIIFYaFfLOA4EhQTsMPDv6wjUSh16y7vhe_dOL4oeEV4RQPQ9IqM0AcSEsZQncBN1cMBlgpKI27BzwRJB2eA-6nm_gzBUAhOsE70tbKP3tTtsCxMPy1k19P2JbiWejhcrH9dV7IuyMK2e1r5xurE-Xp_jxXL09f4Q3eW69LZ31W70-TFejabJfDmZjYbzxKTImiREr_OcCJ4bQVJjgRmiNQfAlDEDXGuTIRtwDowLQMgyFBKyNZPMasoy2o1eLncPrj6erG_UvvDGlqWubH3ySgKhgiCRgXz-Q-7qk6vCc4pIHIQ8pCJQeKGMq713NlcHV-y1OysE1XaqLp2q0KlqO1UQPOTi8YGtNtb9Xv7P9HQN2tbV5hh8P0lUEoQ0Tek3ujOAtQ</recordid><startdate>20111001</startdate><enddate>20111001</enddate><creator>Li, HaiOu</creator><creator>Huang, Wei</creator><creator>Li, SiMin</creator><creator>Tang, ChakWah</creator><creator>Lau, KeiMay</creator><general>SP Science China Press</general><general>Springer Nature B.V</general><scope>2RA</scope><scope>92L</scope><scope>CQIGP</scope><scope>~WA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AEUYN</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>BHPHI</scope><scope>BKSAR</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>P5Z</scope><scope>P62</scope><scope>PCBAR</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><scope>7TG</scope><scope>KL.</scope></search><sort><creationdate>20111001</creationdate><title>Metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD</title><author>Li, HaiOu ; Huang, Wei ; Li, SiMin ; Tang, ChakWah ; Lau, KeiMay</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c514t-348bff276fc725ce04c2aa6001544c06aacd148660467010dd1790db494ea34d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Astronomy</topic><topic>Classical and Continuum Physics</topic><topic>GaInAs</topic><topic>HEMT器件</topic><topic>High electron mobility transistors</topic><topic>Metalorganic chemical vapor deposition</topic><topic>MOCVD</topic><topic>Observations and Techniques</topic><topic>Organic chemistry</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Research Paper</topic><topic>Semiconductor devices</topic><topic>Silicon</topic><topic>Silicon substrates</topic><topic>Transconductance</topic><topic>变质</topic><topic>最高振荡频率</topic><topic>硅衬底</topic><topic>金属有机</topic><topic>高电子迁移率晶体管</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, HaiOu</creatorcontrib><creatorcontrib>Huang, Wei</creatorcontrib><creatorcontrib>Li, SiMin</creatorcontrib><creatorcontrib>Tang, ChakWah</creatorcontrib><creatorcontrib>Lau, KeiMay</creatorcontrib><collection>中文科技期刊数据库</collection><collection>中文科技期刊数据库-CALIS站点</collection><collection>中文科技期刊数据库-7.0平台</collection><collection>中文科技期刊数据库- 镜像站点</collection><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest One Sustainability</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection (ProQuest)</collection><collection>Natural Science Collection (ProQuest)</collection><collection>Earth, Atmospheric & Aquatic Science Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Earth, Atmospheric & Aquatic Science Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><collection>Meteorological & Geoastrophysical Abstracts</collection><collection>Meteorological & Geoastrophysical Abstracts - Academic</collection><jtitle>Science China. Physics, mechanics & astronomy</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, HaiOu</au><au>Huang, Wei</au><au>Li, SiMin</au><au>Tang, ChakWah</au><au>Lau, KeiMay</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD</atitle><jtitle>Science China. Physics, mechanics & astronomy</jtitle><stitle>Sci. China Phys. Mech. Astron</stitle><addtitle>SCIENCE CHINA Physics, Mechanics ＆ Astronomy</addtitle><date>2011-10-01</date><risdate>2011</risdate><volume>54</volume><issue>10</issue><spage>1815</spage><epage>1818</epage><pages>1815-1818</pages><issn>1674-7348</issn><eissn>1869-1927</eissn><abstract>Metamorphic Al0.50In0.50As/Ga0.47In0.53As high electron mobility transistors （mHEMTs） grown by Metal Organic ChemicalVapor Deposition （MOCVD） on n-type silicon substrates with introduction of a novel multi-stage buffering stack scheme havebeen fabricated for the first time. 1.0- m-gate-length depletion-mode mHEMTs with maximum transconductance up to 613mS/mm are achieved. The unity current gain cut-off frequency （fT） and the maximum oscillation frequency （fmax） are 36.9 and55.6 GHz, respectively. This device has the highest fTyet reported for 1.0- m-gate-length HEMTs grown on silicon byMOCVD. Also, this performance is comparable to that of similar GaAs-based mHEMTs. These are encouraging initial resultsleading to the manufacturing potential of integrated high-speed metamorphic devices for logic applications on silicon sub-strates by MOCVD.</abstract><cop>Heidelberg</cop><pub>SP Science China Press</pub><doi>10.1007/s11433-011-4456-0</doi><tpages>4</tpages></addata></record> |
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| source | Springer Nature - Complete Springer Journals; Alma/SFX Local Collection |
| subjects | Astronomy Classical and Continuum Physics GaInAs HEMT器件 High electron mobility transistors Metalorganic chemical vapor deposition MOCVD Observations and Techniques Organic chemistry Physics Physics and Astronomy Research Paper Semiconductor devices Silicon Silicon substrates Transconductance 变质 最高振荡频率 硅衬底 金属有机 高电子迁移率晶体管 |
| title | Metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD |
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