Metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD

Metamorphic Al0.50In0.50As/Ga0.47In0.53As high electron mobility transistors （mHEMTs） grown by Metal Organic ChemicalVapor Deposition （MOCVD） on n-type silicon substrates with introduction of a novel multi-stage buffering stack scheme havebeen fabricated for the first time. 1.0- m-gate-length depletion-mode mHEMTs with maximum transconductance up to 613mS/mm are achieved. The unity current gain cut-off frequency （fT） and the maximum oscillation frequency （fmax） are 36.9 and55.6 GHz, respectively. This device has the highest fTyet reported for 1.0- m-gate-length HEMTs grown on silicon byMOCVD. Also, this performance is comparable to that of similar GaAs-based mHEMTs. These are encouraging initial resultsleading to the manufacturing potential of integrated high-speed metamorphic devices for logic applications on silicon sub-strates by MOCVD.