An 18-GHz 300-mW SiGe power HBT
An 18-GHz, 300-mW SiGe power heterojunction bipolar transistor (HBT) is demonstrated. The optimization of SiGe HBT vertical profile has enabled this type of devices to operate with high gain and high power at this high frequency. In the common-base configuration, a continuous wave output power of 24...
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| Veröffentlicht in: | IEEE electron device letters 2005-06, Vol.26 (6), p.381-383 |
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| container_end_page | 383 |
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| container_issue | 6 |
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| container_title | IEEE electron device letters |
| container_volume | 26 |
| creator | Zhenqiang Ma Ningyue Jiang Guogong Wang Alterovitz, S.A. |
| description | An 18-GHz, 300-mW SiGe power heterojunction bipolar transistor (HBT) is demonstrated. The optimization of SiGe HBT vertical profile has enabled this type of devices to operate with high gain and high power at this high frequency. In the common-base configuration, a continuous wave output power of 24.73 dBm with a power gain of 4.5 dB was measured from a single 20-emitter stripe SiGe (2×30 μm 2 of each emitter finger) double HBT. The overall performance characteristics represent the state-of-the-art SiGe power HBTs operating in the K-band frequency range. |
| doi_str_mv | 10.1109/LED.2005.848619 |
| format | Article |
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The optimization of SiGe HBT vertical profile has enabled this type of devices to operate with high gain and high power at this high frequency. In the common-base configuration, a continuous wave output power of 24.73 dBm with a power gain of 4.5 dB was measured from a single 20-emitter stripe SiGe (2×30 μm 2 of each emitter finger) double HBT. The overall performance characteristics represent the state-of-the-art SiGe power HBTs operating in the K-band frequency range.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2005.848619</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; CMOS technology ; Common-base ; Devices ; Doping ; Electronics ; Exact sciences and technology ; Fingers ; Frequency ; Frequency ranges ; Gain measurement ; Germanium silicon alloys ; Heterojunction bipolar transistors ; heterojunction bipolar transistors (HBTs) ; High gain ; K-band ; Noise levels ; Optimization ; Other multijunction devices. Power transistors. Thyristors ; Power generation ; Power measurement ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The optimization of SiGe HBT vertical profile has enabled this type of devices to operate with high gain and high power at this high frequency. In the common-base configuration, a continuous wave output power of 24.73 dBm with a power gain of 4.5 dB was measured from a single 20-emitter stripe SiGe (2×30 μm 2 of each emitter finger) double HBT. The overall performance characteristics represent the state-of-the-art SiGe power HBTs operating in the K-band frequency range.</description><subject>Applied sciences</subject><subject>CMOS technology</subject><subject>Common-base</subject><subject>Devices</subject><subject>Doping</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fingers</subject><subject>Frequency</subject><subject>Frequency ranges</subject><subject>Gain measurement</subject><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>heterojunction bipolar transistors (HBTs)</subject><subject>High gain</subject><subject>K-band</subject><subject>Noise levels</subject><subject>Optimization</subject><subject>Other multijunction devices. Power transistors. Thyristors</subject><subject>Power generation</subject><subject>Power measurement</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SiGe</subject><subject>Silicon germanides</subject><subject>Silicon germanium</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kE1LAzEQhoMoWKtnDx5cBPW07SSbz2NbaysUPFjxGNI0gS3b3Zq0iP56U7ZQ8OBpDvO8LzMPQtcYehiD6s_GTz0CwHqSSo7VCepgxmQOjBenqAOC4rzAwM_RRYwrAEypoB10O6gzLPPJ9CcrAPL1R_ZWTly2ab5cyKbD-SU686aK7uowu-j9eTwfTfPZ6-RlNJjllhKyzQXzXsKSUucINYRSb5YCO-8NtUIqyhmxlgvmwHNvpOOLhC-WRoFN13JRdNFj27sJzefOxa1el9G6qjK1a3ZRK8ACqCBFIh_-JYkEpjjBCbz7A66aXajTF1phAoJIwhLUbyEbmhiD83oTyrUJ3xqD3nvVyavee9Wt15S4P9SaaE3lg6ltGY8xLgWTsL_zpuVK59xxTQuigBe_o117Ig</recordid><startdate>20050601</startdate><enddate>20050601</enddate><creator>Zhenqiang Ma</creator><creator>Ningyue Jiang</creator><creator>Guogong Wang</creator><creator>Alterovitz, S.A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Power transistors. Thyristors</topic><topic>Power generation</topic><topic>Power measurement</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>SiGe</topic><topic>Silicon germanides</topic><topic>Silicon germanium</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhenqiang Ma</creatorcontrib><creatorcontrib>Ningyue Jiang</creatorcontrib><creatorcontrib>Guogong Wang</creatorcontrib><creatorcontrib>Alterovitz, S.A.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhenqiang Ma</au><au>Ningyue Jiang</au><au>Guogong Wang</au><au>Alterovitz, S.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An 18-GHz 300-mW SiGe power HBT</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2005-06-01</date><risdate>2005</risdate><volume>26</volume><issue>6</issue><spage>381</spage><epage>383</epage><pages>381-383</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>An 18-GHz, 300-mW SiGe power heterojunction bipolar transistor (HBT) is demonstrated. The optimization of SiGe HBT vertical profile has enabled this type of devices to operate with high gain and high power at this high frequency. In the common-base configuration, a continuous wave output power of 24.73 dBm with a power gain of 4.5 dB was measured from a single 20-emitter stripe SiGe (2×30 μm 2 of each emitter finger) double HBT. The overall performance characteristics represent the state-of-the-art SiGe power HBTs operating in the K-band frequency range.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2005.848619</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2005-06, Vol.26 (6), p.381-383 |
| issn | 0741-3106 1558-0563 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences CMOS technology Common-base Devices Doping Electronics Exact sciences and technology Fingers Frequency Frequency ranges Gain measurement Germanium silicon alloys Heterojunction bipolar transistors heterojunction bipolar transistors (HBTs) High gain K-band Noise levels Optimization Other multijunction devices. Power transistors. Thyristors Power generation Power measurement Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiGe Silicon germanides Silicon germanium Transistors |
| title | An 18-GHz 300-mW SiGe power HBT |
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