An 18-GHz 300-mW SiGe power HBT

An 18-GHz 300-mW SiGe power HBT

An 18-GHz, 300-mW SiGe power heterojunction bipolar transistor (HBT) is demonstrated. The optimization of SiGe HBT vertical profile has enabled this type of devices to operate with high gain and high power at this high frequency. In the common-base configuration, a continuous wave output power of 24...

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Veröffentlicht in:IEEE electron device letters 2005-06, Vol.26 (6), p.381-383
Hauptverfasser: Zhenqiang Ma, Ningyue Jiang, Guogong Wang, Alterovitz, S.A.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
CMOS technology
Common-base
Devices
Doping
Electronics
Exact sciences and technology
Fingers
Frequency
Frequency ranges
Gain measurement
Germanium silicon alloys
Heterojunction bipolar transistors
heterojunction bipolar transistors (HBTs)
High gain
K-band
Noise levels
Optimization
Other multijunction devices. Power transistors. Thyristors
Power generation
Power measurement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SiGe
Silicon germanides
Silicon germanium
Transistors
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Zusammenfassung:An 18-GHz, 300-mW SiGe power heterojunction bipolar transistor (HBT) is demonstrated. The optimization of SiGe HBT vertical profile has enabled this type of devices to operate with high gain and high power at this high frequency. In the common-base configuration, a continuous wave output power of 24.73 dBm with a power gain of 4.5 dB was measured from a single 20-emitter stripe SiGe (2×30 μm 2 of each emitter finger) double HBT. The overall performance characteristics represent the state-of-the-art SiGe power HBTs operating in the K-band frequency range.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.848619