Coherence-collapse threshold of 1.3-μm semiconductor DFB lasers

The onset of the coherence-collapse threshold is theoretically and experimentally studied for monomode 1.3-μm antireflection/high reflection distributed-feedback lasers taking into account facet phase effects. The variation of the coherence collapse from chip to chip due to the facet phase is in the...

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Veröffentlicht in:IEEE photonics technology letters 2003-01, Vol.15 (1), p.9-11
Hauptverfasser: Grillot, F., Thedrez, B., Gauthier-Lafaye, O., Martineau, M.F., Voiriot, V., Lafragette, J.L., Gentner, J.L., Silvestre, L.
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container_end_page 11
container_issue 1
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container_title IEEE photonics technology letters
container_volume 15
creator Grillot, F.
Thedrez, B.
Gauthier-Lafaye, O.
Martineau, M.F.
Voiriot, V.
Lafragette, J.L.
Gentner, J.L.
Silvestre, L.
description The onset of the coherence-collapse threshold is theoretically and experimentally studied for monomode 1.3-μm antireflection/high reflection distributed-feedback lasers taking into account facet phase effects. The variation of the coherence collapse from chip to chip due to the facet phase is in the range of 7 dB and remains almost independent of the grating coefficient. Lasers that operate without coherence collapse under -15-dB optical feedback, while exhibiting an efficiency as high as 0.30 W/A, are demonstrated. Such lasers are adequate for 2.5 Gb/s isolator-free transmission without under the International Telecommunication Union recommended return loss.
doi_str_mv 10.1109/LPT.2002.805771
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subjects Chips
Coatings
Coherence
Collapse
Diffraction gratings
Distributed feedback devices
Fiber lasers
Gratings
Laser feedback
Laser modes
Laser theory
Lasers
Optical feedback
Optical reflection
Semiconductor lasers
Semiconductors
Thresholds
Unions
title Coherence-collapse threshold of 1.3-μm semiconductor DFB lasers
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