Coherence-collapse threshold of 1.3-μm semiconductor DFB lasers
The onset of the coherence-collapse threshold is theoretically and experimentally studied for monomode 1.3-μm antireflection/high reflection distributed-feedback lasers taking into account facet phase effects. The variation of the coherence collapse from chip to chip due to the facet phase is in the...
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Veröffentlicht in: | IEEE photonics technology letters 2003-01, Vol.15 (1), p.9-11 |
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creator | Grillot, F. Thedrez, B. Gauthier-Lafaye, O. Martineau, M.F. Voiriot, V. Lafragette, J.L. Gentner, J.L. Silvestre, L. |
description | The onset of the coherence-collapse threshold is theoretically and experimentally studied for monomode 1.3-μm antireflection/high reflection distributed-feedback lasers taking into account facet phase effects. The variation of the coherence collapse from chip to chip due to the facet phase is in the range of 7 dB and remains almost independent of the grating coefficient. Lasers that operate without coherence collapse under -15-dB optical feedback, while exhibiting an efficiency as high as 0.30 W/A, are demonstrated. Such lasers are adequate for 2.5 Gb/s isolator-free transmission without under the International Telecommunication Union recommended return loss. |
doi_str_mv | 10.1109/LPT.2002.805771 |
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The variation of the coherence collapse from chip to chip due to the facet phase is in the range of 7 dB and remains almost independent of the grating coefficient. Lasers that operate without coherence collapse under -15-dB optical feedback, while exhibiting an efficiency as high as 0.30 W/A, are demonstrated. Such lasers are adequate for 2.5 Gb/s isolator-free transmission without under the International Telecommunication Union recommended return loss.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2002.805771</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>IEEE</publisher><subject>Chips ; Coatings ; Coherence ; Collapse ; Diffraction gratings ; Distributed feedback devices ; Fiber lasers ; Gratings ; Laser feedback ; Laser modes ; Laser theory ; Lasers ; Optical feedback ; Optical reflection ; Semiconductor lasers ; Semiconductors ; Thresholds ; Unions</subject><ispartof>IEEE photonics technology letters, 2003-01, Vol.15 (1), p.9-11</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-cdb87ca50cdea034623b1f897527f4c33e3937f4ba88f366bb216d598c3766c13</citedby><cites>FETCH-LOGICAL-c337t-cdb87ca50cdea034623b1f897527f4c33e3937f4ba88f366bb216d598c3766c13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1159045$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1159045$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Grillot, F.</creatorcontrib><creatorcontrib>Thedrez, B.</creatorcontrib><creatorcontrib>Gauthier-Lafaye, O.</creatorcontrib><creatorcontrib>Martineau, M.F.</creatorcontrib><creatorcontrib>Voiriot, V.</creatorcontrib><creatorcontrib>Lafragette, J.L.</creatorcontrib><creatorcontrib>Gentner, J.L.</creatorcontrib><creatorcontrib>Silvestre, L.</creatorcontrib><title>Coherence-collapse threshold of 1.3-μm semiconductor DFB lasers</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>The onset of the coherence-collapse threshold is theoretically and experimentally studied for monomode 1.3-μm antireflection/high reflection distributed-feedback lasers taking into account facet phase effects. The variation of the coherence collapse from chip to chip due to the facet phase is in the range of 7 dB and remains almost independent of the grating coefficient. Lasers that operate without coherence collapse under -15-dB optical feedback, while exhibiting an efficiency as high as 0.30 W/A, are demonstrated. Such lasers are adequate for 2.5 Gb/s isolator-free transmission without under the International Telecommunication Union recommended return loss.</description><subject>Chips</subject><subject>Coatings</subject><subject>Coherence</subject><subject>Collapse</subject><subject>Diffraction gratings</subject><subject>Distributed feedback devices</subject><subject>Fiber lasers</subject><subject>Gratings</subject><subject>Laser feedback</subject><subject>Laser modes</subject><subject>Laser theory</subject><subject>Lasers</subject><subject>Optical feedback</subject><subject>Optical reflection</subject><subject>Semiconductor lasers</subject><subject>Semiconductors</subject><subject>Thresholds</subject><subject>Unions</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpFkLFOwzAQhi0EEqUwM7BkY0q4i5043oBCAakSDGW2HOeiBiV1sdOBd-MZeCZcBYnp_uH7T3cfY5cIGSKom9XbOssB8qyCQko8YjNUAlNAKY5jhpgReXHKzkL4AEBRcDFjtwu3IU9bS6l1fW92gZJx4ylsXN8krk0w4-nP95AEGjrrts3ejs4nD8v7pDeBfDhnJ63pA138zTl7Xz6uF8_p6vXpZXG3Si3nckxtU1fSmgJsQwa4KHNeY1spWeSyFZEhrnhMtamqlpdlXedYNoWqLJdlaZHP2fW0d-fd557CqIcuWIonb8ntg1bxUeAgZCRvJtJ6F4KnVu98Nxj_pRH0QZWOqvRBlZ5UxcbV1OiI6J_GQkG09AvCxmQW</recordid><startdate>200301</startdate><enddate>200301</enddate><creator>Grillot, F.</creator><creator>Thedrez, B.</creator><creator>Gauthier-Lafaye, O.</creator><creator>Martineau, M.F.</creator><creator>Voiriot, V.</creator><creator>Lafragette, J.L.</creator><creator>Gentner, J.L.</creator><creator>Silvestre, L.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>200301</creationdate><title>Coherence-collapse threshold of 1.3-μm semiconductor DFB lasers</title><author>Grillot, F. ; Thedrez, B. ; Gauthier-Lafaye, O. ; Martineau, M.F. ; Voiriot, V. ; Lafragette, J.L. ; Gentner, J.L. ; Silvestre, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-cdb87ca50cdea034623b1f897527f4c33e3937f4ba88f366bb216d598c3766c13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Chips</topic><topic>Coatings</topic><topic>Coherence</topic><topic>Collapse</topic><topic>Diffraction gratings</topic><topic>Distributed feedback devices</topic><topic>Fiber lasers</topic><topic>Gratings</topic><topic>Laser feedback</topic><topic>Laser modes</topic><topic>Laser theory</topic><topic>Lasers</topic><topic>Optical feedback</topic><topic>Optical reflection</topic><topic>Semiconductor lasers</topic><topic>Semiconductors</topic><topic>Thresholds</topic><topic>Unions</topic><toplevel>online_resources</toplevel><creatorcontrib>Grillot, F.</creatorcontrib><creatorcontrib>Thedrez, B.</creatorcontrib><creatorcontrib>Gauthier-Lafaye, O.</creatorcontrib><creatorcontrib>Martineau, M.F.</creatorcontrib><creatorcontrib>Voiriot, V.</creatorcontrib><creatorcontrib>Lafragette, J.L.</creatorcontrib><creatorcontrib>Gentner, J.L.</creatorcontrib><creatorcontrib>Silvestre, L.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Grillot, F.</au><au>Thedrez, B.</au><au>Gauthier-Lafaye, O.</au><au>Martineau, M.F.</au><au>Voiriot, V.</au><au>Lafragette, J.L.</au><au>Gentner, J.L.</au><au>Silvestre, L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Coherence-collapse threshold of 1.3-μm semiconductor DFB lasers</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2003-01</date><risdate>2003</risdate><volume>15</volume><issue>1</issue><spage>9</spage><epage>11</epage><pages>9-11</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>The onset of the coherence-collapse threshold is theoretically and experimentally studied for monomode 1.3-μm antireflection/high reflection distributed-feedback lasers taking into account facet phase effects. The variation of the coherence collapse from chip to chip due to the facet phase is in the range of 7 dB and remains almost independent of the grating coefficient. Lasers that operate without coherence collapse under -15-dB optical feedback, while exhibiting an efficiency as high as 0.30 W/A, are demonstrated. Such lasers are adequate for 2.5 Gb/s isolator-free transmission without under the International Telecommunication Union recommended return loss.</abstract><pub>IEEE</pub><doi>10.1109/LPT.2002.805771</doi><tpages>3</tpages></addata></record> |
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subjects | Chips Coatings Coherence Collapse Diffraction gratings Distributed feedback devices Fiber lasers Gratings Laser feedback Laser modes Laser theory Lasers Optical feedback Optical reflection Semiconductor lasers Semiconductors Thresholds Unions |
title | Coherence-collapse threshold of 1.3-μm semiconductor DFB lasers |
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