Coherence-collapse threshold of 1.3-μm semiconductor DFB lasers

The onset of the coherence-collapse threshold is theoretically and experimentally studied for monomode 1.3-μm antireflection/high reflection distributed-feedback lasers taking into account facet phase effects. The variation of the coherence collapse from chip to chip due to the facet phase is in the...

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Veröffentlicht in:IEEE photonics technology letters 2003-01, Vol.15 (1), p.9-11
Hauptverfasser: Grillot, F., Thedrez, B., Gauthier-Lafaye, O., Martineau, M.F., Voiriot, V., Lafragette, J.L., Gentner, J.L., Silvestre, L.
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Sprache:eng
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Zusammenfassung:The onset of the coherence-collapse threshold is theoretically and experimentally studied for monomode 1.3-μm antireflection/high reflection distributed-feedback lasers taking into account facet phase effects. The variation of the coherence collapse from chip to chip due to the facet phase is in the range of 7 dB and remains almost independent of the grating coefficient. Lasers that operate without coherence collapse under -15-dB optical feedback, while exhibiting an efficiency as high as 0.30 W/A, are demonstrated. Such lasers are adequate for 2.5 Gb/s isolator-free transmission without under the International Telecommunication Union recommended return loss.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2002.805771