On the body-source built-in potential lowering of SOI MOSFETs

This letter provides a viewpoint for the characterization of state-of-the-art thin film silicon-on-insulator (SOI) MOSFETs. Based on body-source built-in potential lowering, the degree of full depletion can be quantified. In addition to serving as a measure of the floating-body behavior of SOI devic...

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Veröffentlicht in:	IEEE electron device letters 2003-02, Vol.24 (2), p.90-92
Hauptverfasser:	Pin Su, Fung, S.K.H., Wyatt, P.W., Hui Wan, Niknejad, A.M., Chan, M., Chenming Hu
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS CMOS technology Consolidation Depletion Devices Doping Impact ionization Low voltage MOSFETs Semiconductor device manufacture Semiconductor device measurement Semiconductor device modeling Semiconductor thin films Silicon on insulator technology State of the art Thin films Trends
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