Electrical properties of top-gate oxide thin-film transistors with double-channel layers

Electrical properties of top-gate oxide thin-film transistors with double-channel layers

Using ZnO, and three compositional In 2O 3-Ga 2O 3-ZnO (IGZO, In:Ga:Zn=1:1:1, 2:1:2, 2:2:1, atomic ratio) semiconductors, we have made and evaluated several double layered oxide thin-film transistors (TFTs). The drain current was mainly affected by the nearer channel material to a gate insulator. Fr...

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Veröffentlicht in:Journal of crystal growth 2011-07, Vol.326 (1), p.186-190
Hauptverfasser: Cheong, Woo-Seok, Mook Chung, Sung, Shin, Jae-Hun, Hwang, Chi-Sun
Format: Artikel
Sprache:eng
Schlagworte:
A1. ZnO
A3. thin-film transistor
Applied sciences
B1. electrical stability
B1. IGZO
B2. double channel layers
B2. oxide semiconductor
Channels
Drains
Electrical properties
Electronics
Exact sciences and technology
Oxides
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Thin films
Transistors
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Zusammenfassung:Using ZnO, and three compositional In 2O 3-Ga 2O 3-ZnO (IGZO, In:Ga:Zn=1:1:1, 2:1:2, 2:2:1, atomic ratio) semiconductors, we have made and evaluated several double layered oxide thin-film transistors (TFTs). The drain current was mainly affected by the nearer channel material to a gate insulator. From the positive bias stress (PBS) tests, however, the electrical stability showed a complicated result, depending on both channel structures and post-heat treatments.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2011.01.094