Active NEMS combining a single crystal silicon mechanical structure and an embedded MOSFET transistor for sensing and RF applications

The paper reports on an integrated device combining a single-crystal silicon NEMS with an embedded MOS transistor in transconductance configuration fabricated with a simple and low cost technology based on localized Silicon on Nothing technology. Thanks to the high transconductance achievable, this...

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Veröffentlicht in:	Microelectronic engineering 2011-08, Vol.88 (8), p.2364-2367
Hauptverfasser:	Ollier, E., Berthelot, A., Duraffourg, L., Colinet, E., Arcamone, J., Renaux, P., Renaud, D., Robert, P., Casset, F., Ancey, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences CMOS Condensed matter: structure, mechanical and thermal properties Electronics Exact sciences and technology General (including economical and industrial fields) Integration Metal oxide semiconductors Micro- and nanoelectromechanical devices (mems/nems) MOSFETs Nanoelectromechanical systems NEMS Physics Resonator Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiGe Silicon Single crystals SON Structure of solids and liquids crystallography Structure of specific crystalline solids Transconductance Transistors
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Beschreibung
Zusammenfassung:	The paper reports on an integrated device combining a single-crystal silicon NEMS with an embedded MOS transistor in transconductance configuration fabricated with a simple and low cost technology based on localized Silicon on Nothing technology. Thanks to the high transconductance achievable, this approach enables NEMS with embedded MOS transistors for enhanced readout efficiency.
ISSN:	0167-9317 1873-5568
DOI:	10.1016/j.mee.2010.11.027